Spin lifetime in InAs epitaxial layers grown on GaAs

K. L. Litvinenko, B. N. Murdin, J. Allam, C. R. Pidgeon, Tong Zhang, J. J. Harris, L. F. Cohen, D. A. Eustace, D. W. McComb

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14 Citations (Scopus)

Abstract

We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range from 77 K to 290 K. InAs is known to have a surface accumulation layer and the depth profile of the concentration and mobility is strongly nonuniform. We have correlated the spin relaxation with a multilayer analysis of the transport properties and find that the surface and the interface with the GaAs substrate both have subpicosecond lifetimes (due to the high carrier concentration), whereas the central semiconducting layer has a lifetime of an order of 10 ps. Even for the thickest film studied (1 µm), the semiconducting layer only carried 30% of the total current (with 10% through the interface layer and 60% through the surface accumulation layer). Designs for spintronic devices that utilize InAs, which is attractive due to its narrow gap and strong Rashba effect, will need to include strategies for minimizing the effects of the surface. © 2006 The American Physical Society.

Original languageEnglish
Article number075331
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume74
Issue number7
DOIs
Publication statusPublished - 2006

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