Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is ∼1% for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 19 Nov 2002|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics