Spin injection from (Ga,Mn)As into InAs quantum dots

Y. Chye, M. E. White, E. Johnston-Halperin, B. D. Gerardot, D. D. Awschalom, P. M. Petroff

Research output: Contribution to journalArticle

Abstract

Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is ∼1% for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.

Original languageEnglish
Article number201301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number20
DOIs
Publication statusPublished - 19 Nov 2002

Fingerprint

Semiconductor quantum wells
Semiconductor quantum dots
Light emitting diodes
quantum dots
Polarization
injection
Electron injection
Epitaxial films
Electroluminescence
light emitting diodes
quantum wells
polarization
electroluminescence
Electrons
electrons
indium arsenide
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Chye, Y. ; White, M. E. ; Johnston-Halperin, E. ; Gerardot, B. D. ; Awschalom, D. D. ; Petroff, P. M. / Spin injection from (Ga,Mn)As into InAs quantum dots. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 66, No. 20.
@article{441e7ff2a0d74e19ab8bdba9ba8f621b,
title = "Spin injection from (Ga,Mn)As into InAs quantum dots",
abstract = "Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is ∼1{\%} for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.",
author = "Y. Chye and White, {M. E.} and E. Johnston-Halperin and Gerardot, {B. D.} and Awschalom, {D. D.} and Petroff, {P. M.}",
year = "2002",
month = "11",
day = "19",
doi = "10.1103/PhysRevB.66.201301",
language = "English",
volume = "66",
journal = "Physical Review B: Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics",
number = "20",

}

Spin injection from (Ga,Mn)As into InAs quantum dots. / Chye, Y.; White, M. E.; Johnston-Halperin, E.; Gerardot, B. D.; Awschalom, D. D.; Petroff, P. M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 20, 201301, 19.11.2002.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spin injection from (Ga,Mn)As into InAs quantum dots

AU - Chye, Y.

AU - White, M. E.

AU - Johnston-Halperin, E.

AU - Gerardot, B. D.

AU - Awschalom, D. D.

AU - Petroff, P. M.

PY - 2002/11/19

Y1 - 2002/11/19

N2 - Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is ∼1% for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.

AB - Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is ∼1% for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.

UR - http://www.scopus.com/inward/record.url?scp=0037113408&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.66.201301

DO - 10.1103/PhysRevB.66.201301

M3 - Article

AN - SCOPUS:0037113408

VL - 66

JO - Physical Review B: Condensed Matter

JF - Physical Review B: Condensed Matter

SN - 0163-1829

IS - 20

M1 - 201301

ER -