Spin injection from (Ga,Mn)As into InAs quantum dots

Y. Chye, M. E. White, E. Johnston-Halperin, B. D. Gerardot, D. D. Awschalom, P. M. Petroff

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is ∼1% for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.

Original languageEnglish
Article number201301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number20
DOIs
Publication statusPublished - 19 Nov 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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