A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.
|Number of pages||4|
|Journal||Physical Review Letters|
|Publication status||Published - 17 Jun 1996|