Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors

A R Cameron, P Riblet, A Miller

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Abstract

A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.

Original languageEnglish
Pages (from-to)4793-4796
Number of pages4
JournalPhysical Review Letters
Volume76
Issue number25
DOIs
Publication statusPublished - 17 Jun 1996

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