Abstract
A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.
Original language | English |
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Pages (from-to) | 4793-4796 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 76 |
Issue number | 25 |
DOIs | |
Publication status | Published - 17 Jun 1996 |