Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

S. D. Ganichev; Petra Schneider; V. V. Bel'kov; E. L. Ivchenko; S. A. Tarasenko; W. Wegscheider; D. Weiss; D. Schuh; B. N. Murdin; P. J. Phillips; C. R. Pidgeon; D. G. Clarke; M. Merrick; P. Murzyn; E. V. Beregulin; W. Prettl

Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

S. D. Ganichev, Petra Schneider, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, D. Schuh, B. N. Murdin, P. J. Phillips, C. R. Pidgeon, D. G. Clarke, M. Merrick, P. Murzyn, E. V. Beregulin, W. Prettl

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.

Original language	English
Article number	081302
Pages (from-to)	813021-813024
Number of pages	4
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	68
Issue number	8
Publication status	Published - Aug 2003

Cite this

Ganichev, S. D., Schneider, P., Bel'kov, V. V., Ivchenko, E. L., Tarasenko, S. A., Wegscheider, W., Weiss, D., Schuh, D., Murdin, B. N., Phillips, P. J., Pidgeon, C. R., Clarke, D. G., Merrick, M., Murzyn, P., Beregulin, E. V., & Prettl, W. (2003). Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures. Physical Review B: Condensed Matter and Materials Physics, 68(8), 813021-813024. Article 081302.

@article{d7077270043f4dfa95a142b3d093c340,

title = "Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures",

abstract = "Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.",

author = "Ganichev, {S. D.} and Petra Schneider and Bel'kov, {V. V.} and Ivchenko, {E. L.} and Tarasenko, {S. A.} and W. Wegscheider and D. Weiss and D. Schuh and Murdin, {B. N.} and Phillips, {P. J.} and Pidgeon, {C. R.} and Clarke, {D. G.} and M. Merrick and P. Murzyn and Beregulin, {E. V.} and W. Prettl",

year = "2003",

month = aug,

language = "English",

volume = "68",

pages = "813021--813024",

journal = "Physical Review B: Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "8",

}

Ganichev, SD, Schneider, P, Bel'kov, VV, Ivchenko, EL, Tarasenko, SA, Wegscheider, W, Weiss, D, Schuh, D, Murdin, BN, Phillips, PJ, Pidgeon, CR, Clarke, DG, Merrick, M, Murzyn, P, Beregulin, EV & Prettl, W 2003, 'Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures', Physical Review B: Condensed Matter and Materials Physics, vol. 68, no. 8, 081302, pp. 813021-813024.

TY - JOUR

T1 - Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

AU - Ganichev, S. D.

AU - Schneider, Petra

AU - Bel'kov, V. V.

AU - Ivchenko, E. L.

AU - Tarasenko, S. A.

AU - Wegscheider, W.

AU - Weiss, D.

AU - Schuh, D.

AU - Murdin, B. N.

AU - Phillips, P. J.

AU - Pidgeon, C. R.

AU - Clarke, D. G.

AU - Merrick, M.

AU - Murzyn, P.

AU - Beregulin, E. V.

AU - Prettl, W.

PY - 2003/8

Y1 - 2003/8

N2 - Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.

AB - Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.

UR - http://www.scopus.com/inward/record.url?scp=3442883787&partnerID=8YFLogxK

M3 - Article

SN - 1098-0121

VL - 68

SP - 813021

EP - 813024

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 8

M1 - 081302

ER -

Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

Abstract

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