Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

S. D. Ganichev, Petra Schneider, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, D. Schuh, B. N. Murdin, P. J. Phillips, C. R. Pidgeon, D. G. Clarke, M. Merrick, P. Murzyn, E. V. Beregulin, W. Prettl

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Abstract

Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.

Original languageEnglish
Article number081302
Pages (from-to)813021-813024
Number of pages4
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume68
Issue number8
Publication statusPublished - Aug 2003

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    Ganichev, S. D., Schneider, P., Bel'kov, V. V., Ivchenko, E. L., Tarasenko, S. A., Wegscheider, W., Weiss, D., Schuh, D., Murdin, B. N., Phillips, P. J., Pidgeon, C. R., Clarke, D. G., Merrick, M., Murzyn, P., Beregulin, E. V., & Prettl, W. (2003). Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures. Physical Review B: Condensed Matter and Materials Physics, 68(8), 813021-813024. [081302].