Magnetic field and temperature dependent photoluminescence studies on neutral and charged excitons in individual InAs quantum dots allow us to uncover different mechanisms by which the discrete quantum dot states are coupled to delocalized continuum states in a quantum well (the wetting layer). The behavior of the neutral and singly charged excitons can be explained taking only discrete quantum dot states into account. For doubly and triply charged excitons we have to consider spin dependent coherent and incoherent interactions between discrete quantum dot states and delocalized wetting layer states. © 2005 American Institute of Physics.
|Title of host publication||PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27|
|Number of pages||2|
|Publication status||Published - 30 Jun 2005|
|Event||27th International Conference on the Physics of Semiconductors - Flagstaff, Arizona, Argentina|
Duration: 26 Jul 2004 → 30 Jul 2004
|Conference||27th International Conference on the Physics of Semiconductors|
|Period||26/07/04 → 30/07/04|