Abstract
We show theoretically that competing optical nonlinearities in a semiconductor étalon, with transverse effects included, result in complex spatiotemporal behavior. A theoretical framework is developed that explains many features of the oscillatory behavior. Numerical simulations exhibit kinks, switching waves, whole-beam, and edge oscillations. Simulations compare favorably with recent experiments. © 1993 The American Physical Society.
Original language | English |
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Pages (from-to) | 1480-1491 |
Number of pages | 12 |
Journal | Physical Review A |
Volume | 47 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1993 |