Space-change-limited-current scaling law in a-Si_xC_y: H

INIS

• space 100%
• films 100%
• scaling laws 100%
• masks 66%
• space charge 66%
• growth 33%
• substrates 33%
• layers 33%
• electrodes 33%
• thickness 33%
• carbon 33%
• barriers 33%
• interfaces 33%
• thin films 33%
• deposition 33%
• silicon 33%
• hydrogenation 33%

Engineering

• Scaling Law 100%
• Space Charge 66%
• Hydrogenated Amorphous Silicon 33%
• Growth Condition 33%
• Thin Films 33%
• Schottky Barrier 33%

Material Science

• Film 100%
• Schottky Barrier 33%
• Amorphous Silicon 33%
• Thin Films 33%