Solid yttria-stabilized zirconia films by pulsed chemical vapor deposition from metal-organic precursors

Susan P. Krumdieck, Orfeo Sbaizero, Angela Bullert, Rishi Raj

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A pulsed chemical vapor deposition from metal-organic precursors (MOCVD) system was used to produce solid zirconia, and yttria-stabilized zirconia (YSZ) films. A total of six candidate metal-organic precursors for zirconia and three for yttria were investigated. Three precursor solutions for YSZ proved suitable for pulsed-MOCVD processing. Layers were deposited on metal, alumina, and porous nickel cermet substrates. Under optimal deposition conditions, precursor conversion efficiency of 90% was achieved using a solution of 3.74 vol% zirconium 2-methyl-2-butoxide + 0.42% yttium methoxyethoxide in toluene. The film growth rate was 7.5 μm·h-1 at 525°C deposition temperature. Two alkoxide precursors produced YSZ layers with material costs under $0.50/(μm·cm2).

Original languageEnglish
Pages (from-to)2873-2875
Number of pages3
JournalJournal of the American Ceramic Society
Volume85
Issue number11
DOIs
Publication statusPublished - Nov 2002

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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