Solid yttria-stabilized zirconia films by pulsed chemical vapor deposition from metal-organic precursors

Susan P. Krumdieck; Orfeo Sbaizero; Angela Bullert; Rishi Raj

doi:10.1111/j.1151-2916.2002.tb00549.x

Solid yttria-stabilized zirconia films by pulsed chemical vapor deposition from metal-organic precursors

Susan P. Krumdieck^*, Orfeo Sbaizero, Angela Bullert, Rishi Raj

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A pulsed chemical vapor deposition from metal-organic precursors (MOCVD) system was used to produce solid zirconia, and yttria-stabilized zirconia (YSZ) films. A total of six candidate metal-organic precursors for zirconia and three for yttria were investigated. Three precursor solutions for YSZ proved suitable for pulsed-MOCVD processing. Layers were deposited on metal, alumina, and porous nickel cermet substrates. Under optimal deposition conditions, precursor conversion efficiency of 90% was achieved using a solution of 3.74 vol% zirconium 2-methyl-2-butoxide + 0.42% yttium methoxyethoxide in toluene. The film growth rate was 7.5 μm·h^-1 at 525°C deposition temperature. Two alkoxide precursors produced YSZ layers with material costs under $0.50/(μm·cm²).

Original language	English
Pages (from-to)	2873-2875
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	85
Issue number	11
DOIs	https://doi.org/10.1111/j.1151-2916.2002.tb00549.x
Publication status	Published - Nov 2002

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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title = "Solid yttria-stabilized zirconia films by pulsed chemical vapor deposition from metal-organic precursors",

abstract = "A pulsed chemical vapor deposition from metal-organic precursors (MOCVD) system was used to produce solid zirconia, and yttria-stabilized zirconia (YSZ) films. A total of six candidate metal-organic precursors for zirconia and three for yttria were investigated. Three precursor solutions for YSZ proved suitable for pulsed-MOCVD processing. Layers were deposited on metal, alumina, and porous nickel cermet substrates. Under optimal deposition conditions, precursor conversion efficiency of 90% was achieved using a solution of 3.74 vol% zirconium 2-methyl-2-butoxide + 0.42% yttium methoxyethoxide in toluene. The film growth rate was 7.5 μm·h-1 at 525°C deposition temperature. Two alkoxide precursors produced YSZ layers with material costs under $0.50/(μm·cm2).",

author = "Krumdieck, {Susan P.} and Orfeo Sbaizero and Angela Bullert and Rishi Raj",

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T1 - Solid yttria-stabilized zirconia films by pulsed chemical vapor deposition from metal-organic precursors

AU - Krumdieck, Susan P.

AU - Sbaizero, Orfeo

AU - Bullert, Angela

AU - Raj, Rishi

PY - 2002/11

Y1 - 2002/11

N2 - A pulsed chemical vapor deposition from metal-organic precursors (MOCVD) system was used to produce solid zirconia, and yttria-stabilized zirconia (YSZ) films. A total of six candidate metal-organic precursors for zirconia and three for yttria were investigated. Three precursor solutions for YSZ proved suitable for pulsed-MOCVD processing. Layers were deposited on metal, alumina, and porous nickel cermet substrates. Under optimal deposition conditions, precursor conversion efficiency of 90% was achieved using a solution of 3.74 vol% zirconium 2-methyl-2-butoxide + 0.42% yttium methoxyethoxide in toluene. The film growth rate was 7.5 μm·h-1 at 525°C deposition temperature. Two alkoxide precursors produced YSZ layers with material costs under $0.50/(μm·cm2).

AB - A pulsed chemical vapor deposition from metal-organic precursors (MOCVD) system was used to produce solid zirconia, and yttria-stabilized zirconia (YSZ) films. A total of six candidate metal-organic precursors for zirconia and three for yttria were investigated. Three precursor solutions for YSZ proved suitable for pulsed-MOCVD processing. Layers were deposited on metal, alumina, and porous nickel cermet substrates. Under optimal deposition conditions, precursor conversion efficiency of 90% was achieved using a solution of 3.74 vol% zirconium 2-methyl-2-butoxide + 0.42% yttium methoxyethoxide in toluene. The film growth rate was 7.5 μm·h-1 at 525°C deposition temperature. Two alkoxide precursors produced YSZ layers with material costs under $0.50/(μm·cm2).

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U2 - 10.1111/j.1151-2916.2002.tb00549.x

DO - 10.1111/j.1151-2916.2002.tb00549.x

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JF - Journal of the American Ceramic Society

IS - 11

ER -

Solid yttria-stabilized zirconia films by pulsed chemical vapor deposition from metal-organic precursors

Abstract

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