Solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a silicon integrated-circuit

K. A. Serrels, C. Farrell, T. R. Lundquist, D. T. Reid, P. Vedagarbha

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

By inducing two-photon absorption within the active layer of a proprietary silicon test chip, we demonstrate here solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a 500-MHz ring oscillator circuit at 1560 nm. This work compares the performance of conventional single-photon linear methodologies against advanced two-photon alternatives and reports a maximum laser-induced change in the oscillator stage-delay of approximately 1 ps, and a signal injection resolution of 260 nm. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3658873]

Original languageEnglish
Article number193103
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number19
DOIs
Publication statusPublished - 7 Nov 2011

Cite this