Abstract
Some results of small angle electron scattering studies performed on aSi and aSi:H films prepared both by RF sputtering and by glow discharge decomposition of silane are discussed. © 1985.
| Original language | English |
|---|---|
| Pages (from-to) | 217-220 |
| Number of pages | 4 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 77-78 |
| Issue number | PART 1 |
| Publication status | Published - 2 Dec 1985 |