Abstract
Some results of small angle electron scattering studies performed on aSi and aSi:H films prepared both by RF sputtering and by glow discharge decomposition of silane are discussed. © 1985.
Original language | English |
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Pages (from-to) | 217-220 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 77-78 |
Issue number | PART 1 |
Publication status | Published - 2 Dec 1985 |