Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul; S. A. Lynch; R. Bates; Z. Ikonić; R. W. Kelsall; P. Harrison; D. J. Norris; S. L. Liew; A. G. Cullis; D. D. Arnone; C. R. Pidgeon; P. Murzyn; I. V. Bradley

doi:10.1016/S1386-9477(02)00590-8

Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul
, S. A. Lynch
, R. Bates
, Z. Ikonić
, R. W. Kelsall
, P. Harrison
, D. J. Norris
, S. L. Liew
, A. G. Cullis
, D. D. Arnone
, C. R. Pidgeon
, P. Murzyn
, I. V. Bradley

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	147-155
Number of pages	9
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(02)00590-8
Publication status	Published - Jan 2003
Event	Proceedingsof the Twelfth International Winterschool on New - Mauterndorf, Austria Duration: 25 Feb 2002 → 1 Mar 2002

Keywords

Electroluminescence
Intersubband
Quantum cascade
Si/SiGe

Access to Document

10.1016/S1386-9477(02)00590-8

Cite this

@article{7ec72b154cea432182a284a263412101,

title = "Si/SiGe quantum-cascade emitters for terahertz applications",

abstract = "The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "Electroluminescence, Intersubband, Quantum cascade, Si/SiGe",

author = "Paul, \{D. J.\} and Lynch, \{S. A.\} and R. Bates and Z. Ikoni{\'c} and Kelsall, \{R. W.\} and P. Harrison and Norris, \{D. J.\} and Liew, \{S. L.\} and Cullis, \{A. G.\} and Arnone, \{D. D.\} and Pidgeon, \{C. R.\} and P. Murzyn and Bradley, \{I. V.\}",

year = "2003",

month = jan,

doi = "10.1016/S1386-9477(02)00590-8",

language = "English",

volume = "16",

pages = "147--155",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedingsof the Twelfth International Winterschool on New ; Conference date: 25-02-2002 Through 01-03-2002",

}

TY - JOUR

T1 - Si/SiGe quantum-cascade emitters for terahertz applications

AU - Paul, D. J.

AU - Lynch, S. A.

AU - Bates, R.

AU - Ikonić, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Liew, S. L.

AU - Cullis, A. G.

AU - Arnone, D. D.

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Bradley, I. V.

PY - 2003/1

Y1 - 2003/1

N2 - The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. © 2002 Elsevier Science B.V. All rights reserved.

AB - The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. © 2002 Elsevier Science B.V. All rights reserved.

KW - Electroluminescence

KW - Intersubband

KW - Quantum cascade

KW - Si/SiGe

UR - https://www.scopus.com/pages/publications/0037949154

U2 - 10.1016/S1386-9477(02)00590-8

DO - 10.1016/S1386-9477(02)00590-8

M3 - Article

SN - 1386-9477

VL - 16

SP - 147

EP - 155

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - Proceedingsof the Twelfth International Winterschool on New

Y2 - 25 February 2002 through 1 March 2002

ER -

Si/SiGe quantum-cascade emitters for terahertz applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this