Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul, S. A. Lynch, R. Bates, Z. Ikonić, R. W. Kelsall, P. Harrison, D. J. Norris, S. L. Liew, A. G. Cullis, D. D. Arnone, C. R. Pidgeon, P. Murzyn, I. V. Bradley

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)147-155
Number of pages9
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
Publication statusPublished - Jan 2003
EventProceedingsof the Twelfth International Winterschool on New - Mauterndorf, Austria
Duration: 25 Feb 20021 Mar 2002


  • Electroluminescence
  • Intersubband
  • Quantum cascade
  • Si/SiGe


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