Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul; S. A. Lynch; R. Bates; Z. Ikonić; R. W. Kelsall; P. Harrison; D. J. Norris; S. L. Liew; A. G. Cullis; D. D. Arnone; C. R. Pidgeon; P. Murzyn; I. V. Bradley

doi:10.1016/S1386-9477(02)00590-8

Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul, S. A. Lynch, R. Bates, Z. Ikonić, R. W. Kelsall, P. Harrison, D. J. Norris, S. L. Liew, A. G. Cullis, D. D. Arnone, C. R. Pidgeon, P. Murzyn, I. V. Bradley

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	147-155
Number of pages	9
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(02)00590-8
Publication status	Published - Jan 2003
Event	Proceedingsof the Twelfth International Winterschool on New - Mauterndorf, Austria Duration: 25 Feb 2002 → 1 Mar 2002

Keywords

Electroluminescence
Intersubband
Quantum cascade
Si/SiGe

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10.1016/S1386-9477(02)00590-8

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title = "Si/SiGe quantum-cascade emitters for terahertz applications",

abstract = "The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "Electroluminescence, Intersubband, Quantum cascade, Si/SiGe",

author = "Paul, {D. J.} and Lynch, {S. A.} and R. Bates and Z. Ikoni{\'c} and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Liew, {S. L.} and Cullis, {A. G.} and Arnone, {D. D.} and Pidgeon, {C. R.} and P. Murzyn and Bradley, {I. V.}",

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AU - Paul, D. J.

AU - Lynch, S. A.

AU - Bates, R.

AU - Ikonić, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Liew, S. L.

AU - Cullis, A. G.

AU - Arnone, D. D.

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Bradley, I. V.

PY - 2003/1

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N2 - The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. © 2002 Elsevier Science B.V. All rights reserved.

AB - The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 µm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K. © 2002 Elsevier Science B.V. All rights reserved.

KW - Electroluminescence

KW - Intersubband

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KW - Si/SiGe

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DO - 10.1016/S1386-9477(02)00590-8

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JO - Physica E: Low-Dimensional Systems and Nanostructures

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T2 - Proceedingsof the Twelfth International Winterschool on New

Y2 - 25 February 2002 through 1 March 2002

ER -

Si/SiGe quantum-cascade emitters for terahertz applications

Abstract

Keywords

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