@inproceedings{56dda0bb8fdd4ff2bf4237196b828ffd,
title = "Single point diamond turning of single crystal silicon carbide: molecular dynamic simulation study",
abstract = "Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal beta-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). beta-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp(3) - sp(2) order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.",
keywords = "beta-silicon carbide (cubic), single point diamond turning, MD simulations",
author = "Saurav Goel and Xichun Luo and Reuben, {R. L.} and {Bin Rashid}, Walleed and Jining Sun",
year = "2012",
doi = "10.4028/www.scientific.net/KEM.496.150",
language = "English",
isbn = "978-3-03785-297-2",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications",
pages = "150--155",
editor = "Morgan, {Michael N } and Andrew Shaw and Mgaloblishvili, {Otar }",
booktitle = "Precision Machining VI",
address = "Germany",
note = "6th International Congress of Precision Machining, ICPM 2011 ; Conference date: 13-09-2011 Through 15-09-2011",
}