Single point diamond turning of single crystal silicon carbide: molecular dynamic simulation study

Saurav Goel*, Xichun Luo, R. L. Reuben, Walleed Bin Rashid, Jining Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)


Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal beta-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). beta-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp(3) - sp(2) order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

Original languageEnglish
Title of host publicationPrecision Machining VI
EditorsMichael N Morgan, Andrew Shaw, Otar Mgaloblishvili
PublisherTrans Tech Publications
Number of pages6
ISBN (Print)978-3-03785-297-2
Publication statusPublished - 2012
Event6th International Congress of Precision Machining - Liverpool, United Kingdom
Duration: 13 Sept 201115 Sept 2011

Publication series

NameKey Engineering Materials
ISSN (Print)1013-9826


Conference6th International Congress of Precision Machining
Abbreviated titleICPM 2011
Country/TerritoryUnited Kingdom


  • beta-silicon carbide (cubic)
  • single point diamond turning
  • MD simulations


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