Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon

Saurav Goel, Xichun Luo, R. L. Reuben, Walleed Bin Rashid, Jining Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Wear of diamond tool has always been a limiting factor in ductile regime machining of large size silicon components. In order to understand the tool wear phenomena, it is non-trivial to know the process outputs especially cutting forces, stresses and temperature during nanometric turning. In this paper, a realistic potential energy function has been deployed through molecular dynamic (MD) simulation, to simulate the process outputs of single diamond turning operation against single crystal silicon. The simulation result suggests that wear mechanism of diamond tool is fundamentally governed by these process parameters and thus critical.

Original languageEnglish
Title of host publicationPrecision Machining VI
EditorsMichael N Morgan, Andrew Shaw, Otar Mgaloblishvili
PublisherTrans Tech Publications
Pages223-228
Number of pages6
ISBN (Print)978-3-03785-297-2
DOIs
Publication statusPublished - 2012
Event6th International Congress of Precision Machining - Liverpool, United Kingdom
Duration: 13 Sep 201115 Sep 2011

Publication series

NameKey Engineering Materials
Volume496
ISSN (Print)1013-9826

Conference

Conference6th International Congress of Precision Machining
Abbreviated titleICPM 2011
CountryUnited Kingdom
CityLiverpool
Period13/09/1115/09/11

Keywords

  • WEAR
  • single crystal silicon
  • DIAMOND TOOLS
  • MOLECULAR-DYNAMICS SIMULATION
  • single point diamond turning
  • MD simulations

Cite this

Goel, S., Luo, X., Reuben, R. L., Bin Rashid, W., & Sun, J. (2012). Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon. In M. N. Morgan, A. Shaw, & O. Mgaloblishvili (Eds.), Precision Machining VI (pp. 223-228). (Key Engineering Materials; Vol. 496). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/KEM.496.223