Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes

Charles Smith; Jarosław Kirdoda; Derek C. S. Dumas; Conor Coughlan; Charlie McCarthy; Hannah Mowbray; Muhammad Mirza; Fiona Fleming; Xin Yi; Lisa Saalbach; Gerald S. Buller; Douglas J. Paul; Ross W. Millar

doi:10.1117/12.2650154

Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes

Charles Smith, Jarosław Kirdoda, Derek C. S. Dumas, Conor Coughlan, Charlie McCarthy, Hannah Mowbray, Muhammad Mirza, Fiona Fleming, Xin Yi, Lisa Saalbach, Gerald S. Buller, Douglas J. Paul^*, Ross W. Millar^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

234 Downloads (Pure)

Abstract

Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs with absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we have simulated the dark count rate of these devices, using a custom solver for McIntyre's avalanche model and a trap assisted tunnelling generation model. Calibration and fitting have been performed using experimental data and the results have highlighted areas in which the technology can be optimised.

Original language	English
Title of host publication	Silicon Photonics XVIII
Editors	Graham T. Reed, Andrew P. Knights
Publisher	SPIE
ISBN (Electronic)	9781510659582
ISBN (Print)	9781510659575
DOIs	https://doi.org/10.1117/12.2650154
Publication status	Published - 13 Mar 2023
Event	SPIE OPTO 2023 - San Francisco, United States Duration: 28 Jan 2023 → 3 Feb 2023

Publication series

Name	Proceedings of SPIE
Volume	12426
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	SPIE OPTO 2023
Country/Territory	United States
City	San Francisco
Period	28/01/23 → 3/02/23

Keywords

device simulation
Ge-on-Si
Si Photonics
Single photon avalanche diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2650154

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Copyright 2023 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. Proceedings Volume 12426, Silicon Photonics XVIII; 124260S (2023) https://doi.org/10.1117/12.2650154
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Smith, C., Kirdoda, J., Dumas, D. C. S., Coughlan, C., McCarthy, C., Mowbray, H., Mirza, M., Fleming, F., Yi, X., Saalbach, L., Buller, G. S., Paul, D. J., & Millar, R. W. (2023). Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes. In G. T. Reed, & A. P. Knights (Eds.), Silicon Photonics XVIII Article 124260S (Proceedings of SPIE; Vol. 12426). SPIE. https://doi.org/10.1117/12.2650154

@inproceedings{acb4341317f341ae92be34792c2d3015,

title = "Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes",

abstract = "Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs with absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we have simulated the dark count rate of these devices, using a custom solver for McIntyre's avalanche model and a trap assisted tunnelling generation model. Calibration and fitting have been performed using experimental data and the results have highlighted areas in which the technology can be optimised.",

keywords = "device simulation, Ge-on-Si, Si Photonics, Single photon avalanche diode",

author = "Charles Smith and Jaros{\l}aw Kirdoda and Dumas, \{Derek C. S.\} and Conor Coughlan and Charlie McCarthy and Hannah Mowbray and Muhammad Mirza and Fiona Fleming and Xin Yi and Lisa Saalbach and Buller, \{Gerald S.\} and Paul, \{Douglas J.\} and Millar, \{Ross W.\}",

year = "2023",

month = mar,

day = "13",

doi = "10.1117/12.2650154",

language = "English",

isbn = "9781510659575",

series = "Proceedings of SPIE",

publisher = "SPIE",

editor = "Reed, \{Graham T.\} and Knights, \{Andrew P.\}",

booktitle = "Silicon Photonics XVIII",

address = "United States",

note = "SPIE OPTO 2023 ; Conference date: 28-01-2023 Through 03-02-2023",

}

Smith, C, Kirdoda, J, Dumas, DCS, Coughlan, C, McCarthy, C, Mowbray, H, Mirza, M, Fleming, F , Yi, X , Saalbach, L , Buller, GS, Paul, DJ & Millar, RW 2023, Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes. in GT Reed & AP Knights (eds), Silicon Photonics XVIII., 124260S, Proceedings of SPIE, vol. 12426, SPIE, SPIE OPTO 2023, San Francisco, California, United States, 28/01/23. https://doi.org/10.1117/12.2650154

TY - GEN

T1 - Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes

AU - Smith, Charles

AU - Kirdoda, Jarosław

AU - Dumas, Derek C. S.

AU - Coughlan, Conor

AU - McCarthy, Charlie

AU - Mowbray, Hannah

AU - Mirza, Muhammad

AU - Fleming, Fiona

AU - Yi, Xin

AU - Saalbach, Lisa

AU - Buller, Gerald S.

AU - Paul, Douglas J.

AU - Millar, Ross W.

PY - 2023/3/13

Y1 - 2023/3/13

N2 - Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs with absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we have simulated the dark count rate of these devices, using a custom solver for McIntyre's avalanche model and a trap assisted tunnelling generation model. Calibration and fitting have been performed using experimental data and the results have highlighted areas in which the technology can be optimised.

AB - Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs with absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we have simulated the dark count rate of these devices, using a custom solver for McIntyre's avalanche model and a trap assisted tunnelling generation model. Calibration and fitting have been performed using experimental data and the results have highlighted areas in which the technology can be optimised.

KW - device simulation

KW - Ge-on-Si

KW - Si Photonics

KW - Single photon avalanche diode

UR - https://www.scopus.com/pages/publications/85160338042

U2 - 10.1117/12.2650154

DO - 10.1117/12.2650154

M3 - Conference contribution

AN - SCOPUS:85160338042

SN - 9781510659575

T3 - Proceedings of SPIE

BT - Silicon Photonics XVIII

A2 - Reed, Graham T.

A2 - Knights, Andrew P.

PB - SPIE

T2 - SPIE OPTO 2023

Y2 - 28 January 2023 through 3 February 2023

ER -

Simulation and Design Optimization of Germanium-on-Silicon Single Photon Avalanche Diodes

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