Simple trapped-ion architecture for high-fidelity Toffoli gates

Massimo Borrelli, Laura Mazzola, Mauro Paternostro, Sabrina Maniscalco

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)
86 Downloads (Pure)


We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.
Original languageEnglish
Article number012314
Number of pages6
JournalPhysical Review A
Issue number1
Publication statusPublished - 13 Jul 2011


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