Silicon isolated double quantum-dot qubit architectures

D. A. Williams; M. G. Tanner; T. Ferrus; G. Podd; A. Andreev; P. Chapman

doi:10.1142/9789814282130_0051

Silicon isolated double quantum-dot qubit architectures

D. A. Williams, M. G. Tanner, T. Ferrus, G. Podd, A. Andreev, P. Chapman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We present both experimental and theoretical results on silicon isolated double quantum-dots (IDQDs) fabricated through trench isolation of silicon-on-insulator, with near-by single electron transistors (SETs) for charge state sensing. The IDQD can be described as an artificial molecule and is therefore capable of exhibiting quantum superposition states suitable for quantum information processing.

Original language	English
Title of host publication	Foundations of Quantum Mechanics in the Light of New Technology
Subtitle of host publication	ISQM — Tokyo'08
Publisher	World Scientific Publishing
Pages	235-238
Number of pages	4
ISBN (Electronic)	9789814467032
ISBN (Print)	9789814282123
DOIs	https://doi.org/10.1142/9789814282130_0051
Publication status	Published - Jun 2009
Event	9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008 - Hatoyama, Saitama, Japan Duration: 25 Aug 2008 → 28 Aug 2008

Conference

Conference	9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008
Abbreviated title	ISQM-Tokyo 2008
Country/Territory	Japan
City	Hatoyama, Saitama
Period	25/08/08 → 28/08/08

Keywords

Quantum information processing
Silicon isolated double quantum dots

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1142/9789814282130_0051

Cite this

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title = "Silicon isolated double quantum-dot qubit architectures",

abstract = "We present both experimental and theoretical results on silicon isolated double quantum-dots (IDQDs) fabricated through trench isolation of silicon-on-insulator, with near-by single electron transistors (SETs) for charge state sensing. The IDQD can be described as an artificial molecule and is therefore capable of exhibiting quantum superposition states suitable for quantum information processing.",

keywords = "Quantum information processing, Silicon isolated double quantum dots",

author = "Williams, {D. A.} and Tanner, {M. G.} and T. Ferrus and G. Podd and A. Andreev and P. Chapman",

year = "2009",

month = jun,

doi = "10.1142/9789814282130_0051",

language = "English",

isbn = "9789814282123",

pages = "235--238",

booktitle = "Foundations of Quantum Mechanics in the Light of New Technology",

publisher = "World Scientific Publishing",

address = "United States",

note = "9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008, ISQM-Tokyo 2008 ; Conference date: 25-08-2008 Through 28-08-2008",

}

Williams, DA, Tanner, MG, Ferrus, T, Podd, G, Andreev, A & Chapman, P 2009, Silicon isolated double quantum-dot qubit architectures. in Foundations of Quantum Mechanics in the Light of New Technology: ISQM — Tokyo'08. World Scientific Publishing, pp. 235-238, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008, Hatoyama, Saitama, Japan, 25/08/08. https://doi.org/10.1142/9789814282130_0051

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T1 - Silicon isolated double quantum-dot qubit architectures

AU - Williams, D. A.

AU - Tanner, M. G.

AU - Ferrus, T.

AU - Podd, G.

AU - Andreev, A.

AU - Chapman, P.

PY - 2009/6

Y1 - 2009/6

N2 - We present both experimental and theoretical results on silicon isolated double quantum-dots (IDQDs) fabricated through trench isolation of silicon-on-insulator, with near-by single electron transistors (SETs) for charge state sensing. The IDQD can be described as an artificial molecule and is therefore capable of exhibiting quantum superposition states suitable for quantum information processing.

AB - We present both experimental and theoretical results on silicon isolated double quantum-dots (IDQDs) fabricated through trench isolation of silicon-on-insulator, with near-by single electron transistors (SETs) for charge state sensing. The IDQD can be described as an artificial molecule and is therefore capable of exhibiting quantum superposition states suitable for quantum information processing.

KW - Quantum information processing

KW - Silicon isolated double quantum dots

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U2 - 10.1142/9789814282130_0051

DO - 10.1142/9789814282130_0051

M3 - Conference contribution

AN - SCOPUS:84903824285

SN - 9789814282123

SP - 235

EP - 238

BT - Foundations of Quantum Mechanics in the Light of New Technology

PB - World Scientific Publishing

T2 - 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008

Y2 - 25 August 2008 through 28 August 2008

ER -

Silicon isolated double quantum-dot qubit architectures

Abstract

Conference

Keywords

ASJC Scopus subject areas

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