Silicon isolated double quantum-dot qubit architectures

D. A. Williams, M. G. Tanner, T. Ferrus, G. Podd, A. Andreev, P. Chapman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present both experimental and theoretical results on silicon isolated double quantum-dots (IDQDs) fabricated through trench isolation of silicon-on-insulator, with near-by single electron transistors (SETs) for charge state sensing. The IDQD can be described as an artificial molecule and is therefore capable of exhibiting quantum superposition states suitable for quantum information processing.

Original languageEnglish
Title of host publicationFoundations of Quantum Mechanics in the Light of New Technology
Subtitle of host publicationISQM — Tokyo'08
PublisherWorld Scientific Publishing
Pages235-238
Number of pages4
ISBN (Electronic)9789814467032
ISBN (Print)9789814282123
DOIs
Publication statusPublished - Jun 2009
Event9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008 - Hatoyama, Saitama, Japan
Duration: 25 Aug 200828 Aug 2008

Conference

Conference9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008
Abbreviated titleISQM-Tokyo 2008
CountryJapan
CityHatoyama, Saitama
Period25/08/0828/08/08

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Keywords

  • Quantum information processing
  • Silicon isolated double quantum dots

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Williams, D. A., Tanner, M. G., Ferrus, T., Podd, G., Andreev, A., & Chapman, P. (2009). Silicon isolated double quantum-dot qubit architectures. In Foundations of Quantum Mechanics in the Light of New Technology: ISQM — Tokyo'08 (pp. 235-238). World Scientific Publishing. https://doi.org/10.1142/9789814282130_0051