SILICON CVD BY TWIN-BEAM PROCESSING.

David T. Binnie, M. J. Colles, J. I B Wilson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The technique of simultaneous twin-beam processing has been investigated and used to deposit thin films of silicon on a silicon substrate. An argon ion laser was used to create a large concentration of free carriers in the Si conduction band. These carriers were spatially localized in the beam spot on the surface of the substrate. This synergistic effect has been used to induce pyrolytic deposition of Si from SiH//4 non-flowing gas onto a Si substrate.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
Pages9-14
Number of pages6
Volume29
Publication statusPublished - 1984

Fingerprint Dive into the research topics of 'SILICON CVD BY TWIN-BEAM PROCESSING.'. Together they form a unique fingerprint.

  • Cite this

    Binnie, D. T., Colles, M. J., & Wilson, J. I. B. (1984). SILICON CVD BY TWIN-BEAM PROCESSING. In Materials Research Society Symposia Proceedings (Vol. 29, pp. 9-14)