SILICON CVD BY TWIN-BEAM PROCESSING.

David T. Binnie; M. J. Colles; J. I B Wilson

SILICON CVD BY TWIN-BEAM PROCESSING.

David T. Binnie, M. J. Colles, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The technique of simultaneous twin-beam processing has been investigated and used to deposit thin films of silicon on a silicon substrate. An argon ion laser was used to create a large concentration of free carriers in the Si conduction band. These carriers were spatially localized in the beam spot on the surface of the substrate. This synergistic effect has been used to induce pyrolytic deposition of Si from SiH//4 non-flowing gas onto a Si substrate.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Pages	9-14
Number of pages	6
Volume	29
Publication status	Published - 1984

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title = "SILICON CVD BY TWIN-BEAM PROCESSING.",

abstract = "The technique of simultaneous twin-beam processing has been investigated and used to deposit thin films of silicon on a silicon substrate. An argon ion laser was used to create a large concentration of free carriers in the Si conduction band. These carriers were spatially localized in the beam spot on the surface of the substrate. This synergistic effect has been used to induce pyrolytic deposition of Si from SiH//4 non-flowing gas onto a Si substrate.",

author = "Binnie, {David T.} and Colles, {M. J.} and Wilson, {J. I B}",

year = "1984",

language = "English",

isbn = "0444008942",

volume = "29",

pages = "9--14",

booktitle = "Materials Research Society Symposia Proceedings",

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T1 - SILICON CVD BY TWIN-BEAM PROCESSING.

AU - Binnie, David T.

AU - Colles, M. J.

AU - Wilson, J. I B

PY - 1984

Y1 - 1984

N2 - The technique of simultaneous twin-beam processing has been investigated and used to deposit thin films of silicon on a silicon substrate. An argon ion laser was used to create a large concentration of free carriers in the Si conduction band. These carriers were spatially localized in the beam spot on the surface of the substrate. This synergistic effect has been used to induce pyrolytic deposition of Si from SiH//4 non-flowing gas onto a Si substrate.

AB - The technique of simultaneous twin-beam processing has been investigated and used to deposit thin films of silicon on a silicon substrate. An argon ion laser was used to create a large concentration of free carriers in the Si conduction band. These carriers were spatially localized in the beam spot on the surface of the substrate. This synergistic effect has been used to induce pyrolytic deposition of Si from SiH//4 non-flowing gas onto a Si substrate.

M3 - Conference contribution

SN - 0444008942

VL - 29

SP - 9

EP - 14

BT - Materials Research Society Symposia Proceedings

ER -

SILICON CVD BY TWIN-BEAM PROCESSING.

Abstract

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