The technique of simultaneous twin-beam processing has been investigated and used to deposit thin films of silicon on a silicon substrate. An argon ion laser was used to create a large concentration of free carriers in the Si conduction band. These carriers were spatially localized in the beam spot on the surface of the substrate. This synergistic effect has been used to induce pyrolytic deposition of Si from SiH//4 non-flowing gas onto a Si substrate.
|Title of host publication
|Materials Research Society Symposia Proceedings
|Number of pages
|Published - 1984