Si-based electroluminescence at THz frequencies

S. A. Lynch, S. S. Dhillon, R. Bates, D. J. Paul, D. D. Arnone, D. J. Robbins, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. G. Cullis, C. R. Pidgeon, P. Murzyn, A. Loudon

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Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)10-12
Number of pages3
JournalMaterials Science and Engineering: B
Volume89
Issue number1-3
DOIs
Publication statusPublished - 14 Feb 2002

Keywords

  • Germanium
  • Luminescence
  • Quantum effects
  • Silicon

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    Lynch, S. A., Dhillon, S. S., Bates, R., Paul, D. J., Arnone, D. D., Robbins, D. J., Ikonic, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Cullis, A. G., Pidgeon, C. R., Murzyn, P., & Loudon, A. (2002). Si-based electroluminescence at THz frequencies. Materials Science and Engineering: B, 89(1-3), 10-12. https://doi.org/10.1016/S0921-5107(01)00782-6