Si-based electroluminescence at THz frequencies

S. A. Lynch; S. S. Dhillon; R. Bates; D. J. Paul; D. D. Arnone; D. J. Robbins; Z. Ikonic; R. W. Kelsall; P. Harrison; D. J. Norris; A. G. Cullis; C. R. Pidgeon; P. Murzyn; A. Loudon

doi:10.1016/S0921-5107(01)00782-6

Si-based electroluminescence at THz frequencies

S. A. Lynch, S. S. Dhillon, R. Bates, D. J. Paul, D. D. Arnone, D. J. Robbins, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. G. Cullis, C. R. Pidgeon, P. Murzyn, A. Loudon

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	10-12
Number of pages	3
Journal	Materials Science and Engineering: B
Volume	89
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(01)00782-6
Publication status	Published - 14 Feb 2002

Keywords

Germanium
Luminescence
Quantum effects
Silicon

Access to Document

10.1016/S0921-5107(01)00782-6

Cite this

@article{2844a4906b314a78ac29628403409a6e,

title = "Si-based electroluminescence at THz frequencies",

abstract = "Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "Germanium, Luminescence, Quantum effects, Silicon",

author = "Lynch, {S. A.} and Dhillon, {S. S.} and R. Bates and Paul, {D. J.} and Arnone, {D. D.} and Robbins, {D. J.} and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Cullis, {A. G.} and Pidgeon, {C. R.} and P. Murzyn and A. Loudon",

year = "2002",

month = feb,

day = "14",

doi = "10.1016/S0921-5107(01)00782-6",

language = "English",

volume = "89",

pages = "10--12",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Si-based electroluminescence at THz frequencies

AU - Lynch, S. A.

AU - Dhillon, S. S.

AU - Bates, R.

AU - Paul, D. J.

AU - Arnone, D. D.

AU - Robbins, D. J.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Cullis, A. G.

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Loudon, A.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. © 2002 Elsevier Science B.V. All rights reserved.

AB - Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. © 2002 Elsevier Science B.V. All rights reserved.

KW - Germanium

KW - Luminescence

KW - Quantum effects

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0037074831&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(01)00782-6

DO - 10.1016/S0921-5107(01)00782-6

M3 - Article

SN - 0921-5107

VL - 89

SP - 10

EP - 12

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Si-based electroluminescence at THz frequencies

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this