Si-based electroluminescence at THz frequencies

S. A. Lynch, S. S. Dhillon, R. Bates, D. J. Paul, D. D. Arnone, D. J. Robbins, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. G. Cullis, C. R. Pidgeon, P. Murzyn, A. Loudon

Research output: Contribution to journalArticle

Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)10-12
Number of pages3
JournalMaterials Science and Engineering: B
Volume89
Issue number1-3
DOIs
Publication statusPublished - 14 Feb 2002

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electroluminescence
quantum wells
vapor deposition
simulation

Keywords

  • Germanium
  • Luminescence
  • Quantum effects
  • Silicon

Cite this

Lynch, S. A., Dhillon, S. S., Bates, R., Paul, D. J., Arnone, D. D., Robbins, D. J., ... Loudon, A. (2002). Si-based electroluminescence at THz frequencies. Materials Science and Engineering: B, 89(1-3), 10-12. https://doi.org/10.1016/S0921-5107(01)00782-6
Lynch, S. A. ; Dhillon, S. S. ; Bates, R. ; Paul, D. J. ; Arnone, D. D. ; Robbins, D. J. ; Ikonic, Z. ; Kelsall, R. W. ; Harrison, P. ; Norris, D. J. ; Cullis, A. G. ; Pidgeon, C. R. ; Murzyn, P. ; Loudon, A. / Si-based electroluminescence at THz frequencies. In: Materials Science and Engineering: B. 2002 ; Vol. 89, No. 1-3. pp. 10-12.
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keywords = "Germanium, Luminescence, Quantum effects, Silicon",
author = "Lynch, {S. A.} and Dhillon, {S. S.} and R. Bates and Paul, {D. J.} and Arnone, {D. D.} and Robbins, {D. J.} and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Cullis, {A. G.} and Pidgeon, {C. R.} and P. Murzyn and A. Loudon",
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Lynch, SA, Dhillon, SS, Bates, R, Paul, DJ, Arnone, DD, Robbins, DJ, Ikonic, Z, Kelsall, RW, Harrison, P, Norris, DJ, Cullis, AG, Pidgeon, CR, Murzyn, P & Loudon, A 2002, 'Si-based electroluminescence at THz frequencies', Materials Science and Engineering: B, vol. 89, no. 1-3, pp. 10-12. https://doi.org/10.1016/S0921-5107(01)00782-6

Si-based electroluminescence at THz frequencies. / Lynch, S. A.; Dhillon, S. S.; Bates, R.; Paul, D. J.; Arnone, D. D.; Robbins, D. J.; Ikonic, Z.; Kelsall, R. W.; Harrison, P.; Norris, D. J.; Cullis, A. G.; Pidgeon, C. R.; Murzyn, P.; Loudon, A.

In: Materials Science and Engineering: B, Vol. 89, No. 1-3, 14.02.2002, p. 10-12.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Si-based electroluminescence at THz frequencies

AU - Lynch, S. A.

AU - Dhillon, S. S.

AU - Bates, R.

AU - Paul, D. J.

AU - Arnone, D. D.

AU - Robbins, D. J.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Cullis, A. G.

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Loudon, A.

PY - 2002/2/14

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N2 - Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. © 2002 Elsevier Science B.V. All rights reserved.

AB - Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 µm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. © 2002 Elsevier Science B.V. All rights reserved.

KW - Germanium

KW - Luminescence

KW - Quantum effects

KW - Silicon

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JO - Materials Science and Engineering: B

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Lynch SA, Dhillon SS, Bates R, Paul DJ, Arnone DD, Robbins DJ et al. Si-based electroluminescence at THz frequencies. Materials Science and Engineering: B. 2002 Feb 14;89(1-3):10-12. https://doi.org/10.1016/S0921-5107(01)00782-6