Shuttling of spin polarized electrons in molecular transistors

O. A. Ilinskaya, S. I. Kulinich, Ilya V. Krive, Robert I. Shekhter, Y. W. Park, Mats Jonson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanishes as the spin polarization approaches 100%. The feasibility of detecting magnetic shuttling in a C60-based molecular transistor with magnetic (Ni) electrodes is discussed (Pasupathy et al. (2004) [7]).
Original languageEnglish
Pages (from-to)83–87
Number of pages5
JournalSynthetic Metals
Volume216
Early online date10 Dec 2015
DOIs
Publication statusPublished - Jun 2016

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