Shear instability of nanocrystalline silicon carbide during nanometric cutting

Saurav Goel, Xichun Luo, Robert L. Reuben

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Abstract

The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp(3)-sp(2) disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726036]

Original languageEnglish
Article numberARTN 231902
Number of pages5
JournalApplied Physics Letters
Volume100
Issue number23
DOIs
Publication statusPublished - 4 Jun 2012

Keywords

  • BRITTLE-FRACTURE
  • CARBON
  • TRANSFORMATION
  • DIAMOND
  • NANOSCALE
  • LENGTH SCALES
  • MECHANISM
  • MOLECULAR-DYNAMICS SIMULATION
  • PRESSURE
  • FINITE-ELEMENT

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