Abstract
The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp(3)-sp(2) disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726036]
Original language | English |
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Article number | ARTN 231902 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 23 |
DOIs | |
Publication status | Published - 4 Jun 2012 |
Keywords
- BRITTLE-FRACTURE
- CARBON
- TRANSFORMATION
- DIAMOND
- NANOSCALE
- LENGTH SCALES
- MECHANISM
- MOLECULAR-DYNAMICS SIMULATION
- PRESSURE
- FINITE-ELEMENT