Sensitivity of AM/AM linearizer to AM/PM distortion in devices

F. L. Ogboi; P. Tasker; Z. Mohkti; J. Lees; J. Benedikt; S. Ben Smida; K. Morris; M. Beach; J. McGeehan

doi:10.1109/ARFTG.2014.6899507

Sensitivity of AM/AM linearizer to AM/PM distortion in devices

F. L. Ogboi, P. Tasker, Z. Mohkti, J. Lees, J. Benedikt, S. Ben Smida, K. Morris, M. Beach, J. McGeehan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Baseband injection is a technique that can provide a cost-effective linearizing solution that can be combined with supply modulation techniques such as envelope tracking (ET), to minimize AM/AM distortion and potentially simplify the DSP linearization requirement and associated cost. Recently [8], a new approach for computing the baseband injection stimulus, formulated in the envelope domain, was introduced. The concept was originally demonstrated using a 10W Cree GaN-on-SiC HFET device. In this work its robustness with respect to alternative device technology is investigated using 25W Nitronex NPTB00025 GaN-on-SiC HEMT depletion-mode and a 10W, high-voltage LD-MOS, enhancement-mode devices. Its effectiveness in dealing with AM/AM distortion is confirmed.

Original language	English
Title of host publication	83rd ARFTG Microwave Measurement Conference
Publisher	IEEE
ISBN (Electronic)	9781479944231
DOIs	https://doi.org/10.1109/ARFTG.2014.6899507
Publication status	Published - 18 Sept 2014

Keywords

Distortion
Modulation
Multi-tone
Power amplifiers
signal

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10.1109/ARFTG.2014.6899507

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title = "Sensitivity of AM/AM linearizer to AM/PM distortion in devices",

abstract = "Baseband injection is a technique that can provide a cost-effective linearizing solution that can be combined with supply modulation techniques such as envelope tracking (ET), to minimize AM/AM distortion and potentially simplify the DSP linearization requirement and associated cost. Recently [8], a new approach for computing the baseband injection stimulus, formulated in the envelope domain, was introduced. The concept was originally demonstrated using a 10W Cree GaN-on-SiC HFET device. In this work its robustness with respect to alternative device technology is investigated using 25W Nitronex NPTB00025 GaN-on-SiC HEMT depletion-mode and a 10W, high-voltage LD-MOS, enhancement-mode devices. Its effectiveness in dealing with AM/AM distortion is confirmed.",

keywords = "Distortion, Modulation, Multi-tone, Power amplifiers, signal",

author = "Ogboi, {F. L.} and P. Tasker and Z. Mohkti and J. Lees and J. Benedikt and {Ben Smida}, S. and K. Morris and M. Beach and J. McGeehan",

year = "2014",

month = sep,

day = "18",

doi = "10.1109/ARFTG.2014.6899507",

language = "English",

booktitle = "83rd ARFTG Microwave Measurement Conference",

publisher = "IEEE",

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TY - GEN

T1 - Sensitivity of AM/AM linearizer to AM/PM distortion in devices

AU - Ogboi, F. L.

AU - Tasker, P.

AU - Mohkti, Z.

AU - Lees, J.

AU - Benedikt, J.

AU - Ben Smida, S.

AU - Morris, K.

AU - Beach, M.

AU - McGeehan, J.

PY - 2014/9/18

Y1 - 2014/9/18

N2 - Baseband injection is a technique that can provide a cost-effective linearizing solution that can be combined with supply modulation techniques such as envelope tracking (ET), to minimize AM/AM distortion and potentially simplify the DSP linearization requirement and associated cost. Recently [8], a new approach for computing the baseband injection stimulus, formulated in the envelope domain, was introduced. The concept was originally demonstrated using a 10W Cree GaN-on-SiC HFET device. In this work its robustness with respect to alternative device technology is investigated using 25W Nitronex NPTB00025 GaN-on-SiC HEMT depletion-mode and a 10W, high-voltage LD-MOS, enhancement-mode devices. Its effectiveness in dealing with AM/AM distortion is confirmed.

AB - Baseband injection is a technique that can provide a cost-effective linearizing solution that can be combined with supply modulation techniques such as envelope tracking (ET), to minimize AM/AM distortion and potentially simplify the DSP linearization requirement and associated cost. Recently [8], a new approach for computing the baseband injection stimulus, formulated in the envelope domain, was introduced. The concept was originally demonstrated using a 10W Cree GaN-on-SiC HFET device. In this work its robustness with respect to alternative device technology is investigated using 25W Nitronex NPTB00025 GaN-on-SiC HEMT depletion-mode and a 10W, high-voltage LD-MOS, enhancement-mode devices. Its effectiveness in dealing with AM/AM distortion is confirmed.

KW - Distortion

KW - Modulation

KW - Multi-tone

KW - Power amplifiers

KW - signal

U2 - 10.1109/ARFTG.2014.6899507

DO - 10.1109/ARFTG.2014.6899507

M3 - Conference contribution

BT - 83rd ARFTG Microwave Measurement Conference

PB - IEEE

ER -

Sensitivity of AM/AM linearizer to AM/PM distortion in devices

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Keywords

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