This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.
|Title of host publication||2012 7th European Microwave Integrated Circuit Conference|
|Number of pages||4|
|Publication status||Published - 21 Mar 2013|
- design methodology
- power amplifiers
- semiconductor device modelling