Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation

M. Paynter, S. Ben Smida, K. A. Morris, J. P. McGeehan, M. Beach, M. Akmal, J. Lees, J. Benedikt, P. Tasker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.
Original languageEnglish
Title of host publication2012 7th European Microwave Integrated Circuit Conference
PublisherIEEE
Pages76-79
Number of pages4
ISBN (Electronic)9782874870286
ISBN (Print)9781467323024
Publication statusPublished - 21 Mar 2013

Keywords

  • design methodology
  • power amplifiers
  • semiconductor device modelling

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