Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation

M. Paynter; S. Ben Smida; K. A. Morris; J. P. McGeehan; M. Beach; M. Akmal; J. Lees; J. Benedikt; P. Tasker

Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation

M. Paynter, S. Ben Smida, K. A. Morris, J. P. McGeehan, M. Beach, M. Akmal, J. Lees, J. Benedikt, P. Tasker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.

Original language	English
Title of host publication	2012 7th European Microwave Integrated Circuit Conference
Publisher	IEEE
Pages	76-79
Number of pages	4
ISBN (Electronic)	9782874870286
ISBN (Print)	9781467323024
Publication status	Published - 21 Mar 2013

Keywords

design methodology
power amplifiers
semiconductor device modelling

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Paynter, M., Ben Smida, S., Morris, K. A., McGeehan, J. P., Beach, M., Akmal, M., Lees, J., Benedikt, J., & Tasker, P. (2013). Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation. In 2012 7th European Microwave Integrated Circuit Conference (pp. 76-79). IEEE. http://www.scopus.com/inward/record.url?scp=84875915989&partnerID=8YFLogxK

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keywords = "design methodology, power amplifiers, semiconductor device modelling",

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AU - Paynter, M.

AU - Ben Smida, S.

AU - Morris, K. A.

AU - McGeehan, J. P.

AU - Beach, M.

AU - Akmal, M.

AU - Lees, J.

AU - Benedikt, J.

AU - Tasker, P.

PY - 2013/3/21

Y1 - 2013/3/21

N2 - This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.

AB - This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.

KW - design methodology

KW - power amplifiers

KW - semiconductor device modelling

M3 - Conference contribution

SN - 9781467323024

SP - 76

EP - 79

BT - 2012 7th European Microwave Integrated Circuit Conference

PB - IEEE

ER -

Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation

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Keywords

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