Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

Liang Kong, Huolei Wang, David Bajek, Stephanie E. Haggett, Adam F. Forrest, Xiaoling Wang, Bifeng Cui, Jiaoqing Pan, Ying Ding, Maria Ana Cataluna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.

Original languageEnglish
Title of host publication2014 International Semiconductor Laser Conference
PublisherIEEE
Pages137-138
Number of pages2
ISBN (Electronic)9781479957224 , 9781479957217
DOIs
Publication statusPublished - 16 Dec 2014
Event24th IEEE International Semiconductor Laser Conference - Palma de Mallorca, Spain
Duration: 7 Sep 201410 Sep 2014

Conference

Conference24th IEEE International Semiconductor Laser Conference
Abbreviated titleISLC 2014
CountrySpain
CityPalma de Mallorca
Period7/09/1410/09/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Kong, L., Wang, H., Bajek, D., Haggett, S. E., Forrest, A. F., Wang, X., Cui, B., Pan, J., Ding, Y., & Cataluna, M. A. (2014). Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm. In 2014 International Semiconductor Laser Conference (pp. 137-138). [6987488] IEEE. https://doi.org/10.1109/ISLC.2014.201