Abstract
A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.
Original language | English |
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Title of host publication | 2014 International Semiconductor Laser Conference |
Publisher | IEEE |
Pages | 137-138 |
Number of pages | 2 |
ISBN (Electronic) | 9781479957224 , 9781479957217 |
DOIs | |
Publication status | Published - 16 Dec 2014 |
Event | 24th IEEE International Semiconductor Laser Conference - Palma de Mallorca, Spain Duration: 7 Sept 2014 → 10 Sept 2014 |
Conference
Conference | 24th IEEE International Semiconductor Laser Conference |
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Abbreviated title | ISLC 2014 |
Country/Territory | Spain |
City | Palma de Mallorca |
Period | 7/09/14 → 10/09/14 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics