Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyl thienothiophene units

Greg J. McEntee, Filipe Vilela, Peter J Skabara, Thomas D. Anthopoulos, John G. Labram, Steve Tierney, Ross W. Harrington, William Clegg

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Abstract

The synthesis of a new conjugated material is reported; BDHTT-BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (-5.7 eV) and LUMO (-2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT-BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 x 10(-3) cm(2) V(-1) s(-1), with an on/off ratio of 10(4)-10(5) and a threshold voltage of -42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.

Original languageEnglish
Pages (from-to)2091-2097
Number of pages7
JournalJournal of Materials Chemistry
Volume21
Issue number7
DOIs
Publication statusPublished - 21 Feb 2011

Keywords

  • FIELD-EFFECT TRANSISTORS
  • BLEND ORGANIC TRANSISTORS
  • OPTICAL-PROPERTIES
  • FUSED THIOPHENES
  • CARRIER MOBILITY
  • FACILE SYNTHESIS
  • PERFORMANCE
  • SEMICONDUCTORS
  • 1,3,4-THIADIAZOLE
  • DERIVATIVES

Cite this

McEntee, G. J., Vilela, F., Skabara, P. J., Anthopoulos, T. D., Labram, J. G., Tierney, S., Harrington, R. W., & Clegg, W. (2011). Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyl thienothiophene units. Journal of Materials Chemistry, 21(7), 2091-2097. https://doi.org/10.1039/c0jm02607g