The optical nonlinearities produced by screening of the piezoelectric field by photogenerated carriers in a -grown (In, Ga)As/(Al, Ga)As single strained-layer quantum well structure are calculated and compared with those in a -grown structure. Nonlinear absorption and refractive index spectra show that screening of the strain-induced electric field by photo-carriers that have escaped from the -grown quantum well produces optical nonlinearities comparable to those in the more conventional -grown quantum well. © 1995 Società Italiana di Fisica.
- Conference proceedings
- III-V semiconductors
- Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
- Surface and interface electron states