Screening effects in piezoelectric strained [111]-Grown (In, Ga) As/(Al, Ga) As quantum wells

M. Livingstone, I. Galbraith, B. S. Wherrett

Research output: Contribution to journalArticlepeer-review

Abstract

The optical nonlinearities produced by screening of the piezoelectric field by photogenerated carriers in a [111]-grown (In, Ga)As/(Al, Ga)As single strained-layer quantum well structure are calculated and compared with those in a [001]-grown structure. Nonlinear absorption and refractive index spectra show that screening of the strain-induced electric field by photo-carriers that have escaped from the [111]-grown quantum well produces optical nonlinearities comparable to those in the more conventional [001]-grown quantum well. © 1995 Società Italiana di Fisica.

Original languageEnglish
Pages (from-to)1595-1599
Number of pages5
JournalIl Nuovo Cimento D
Volume17
Issue number11-12
DOIs
Publication statusPublished - Nov 1995

Keywords

  • Conference proceedings
  • III-V semiconductors
  • Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
  • Surface and interface electron states

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