Abstract
The optical nonlinearities produced by screening of the piezoelectric field by photogenerated carriers in a [111]-grown (In, Ga)As/(Al, Ga)As single strained-layer quantum well structure are calculated and compared with those in a [001]-grown structure. Nonlinear absorption and refractive index spectra show that screening of the strain-induced electric field by photo-carriers that have escaped from the [111]-grown quantum well produces optical nonlinearities comparable to those in the more conventional [001]-grown quantum well. © 1995 Società Italiana di Fisica.
Original language | English |
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Pages (from-to) | 1595-1599 |
Number of pages | 5 |
Journal | Il Nuovo Cimento D |
Volume | 17 |
Issue number | 11-12 |
DOIs | |
Publication status | Published - Nov 1995 |
Keywords
- Conference proceedings
- III-V semiconductors
- Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
- Surface and interface electron states