Screened excitons in wide-gap semiconductors and quantum wells

M. E. Portnoi, I. Galbraith

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The variable-phase approach is applied to scattering and bound states in screened Coulomb potentials in two and three dimensions. The degree of ionisation for the electron-hole plasma is calculated taking into account scattering in the continuum. A two-dimensional formulation of Levinson's theorem is used for bound-state counting and a simple relationship between the screening length and the number of bound states is found for an attractive Coulomb potential screened by a two-dimensional electron gas. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)676-681
Number of pages6
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998

Keywords

  • Excitons
  • Scattering
  • Screening
  • Two-dimensional systems

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    Portnoi, M. E., & Galbraith, I. (1998). Screened excitons in wide-gap semiconductors and quantum wells. Journal of Crystal Growth, 184-185, 676-681.