Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

D. J. Rogers*, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. L. Voss, A. Ougazzaden, A. Rajan, K. A. Prior, R. McClintock, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

(In) GaN p-i-n structures were grown by MOVPE on both GaN-and ZnO-coated c-sapphire substrates. XRD studies of the as-grown layers revealed that a strongly c-axis oriented wurtzite crystal structure was obtained on both templates and that there was a slight compressive strain in the ZnO underlayer which increased after GaN overgrowth. The InGaN peak position gave an estimate of 13.6at% for the indium content in the active layer. SEM and AFM revealed that the top surface morphologies were similar for both substrates, with an RMS roughness (5 mu m x 5 mu m) of about 10 nm. Granularity appeared slightly coarser (40nm for the device grown on ZnO vs 30nm for the device grown on the GaN template) however. CL revealed a weaker GaN near band edge UV emission peak and a stronger broad defect-related visible emission band for the structure grown on the GaN template. Only a strong ZnO NBE UV emission was observed for the sample grown on the ZnO template. Quarter-wafer chemical lift-off (CLO) of the InGaN-based p-i-n structures from the sapphire substrate was achieved by temporary-bonding the GaN surface to rigid glass support with wax and then selectively dissolving the ZnO in 0.1M HCl. XRD studies revealed that the epitaxial nature and strong preferential c-axis orientation of the layers had been maintained after lift-off. This demonstration of CLO scale-up, without compromising the crystallographic integrity of the (In) GaN p-i-n structure opens up the perspective of transferring GaN based devices off of sapphire substrates industrially.

Original languageEnglish
Title of host publicationOxide-based Materials and Devices VI
EditorsFH Teherani, DC Look, DJ Rogers
Place of PublicationBellingham
PublisherSPIE
Number of pages8
DOIs
Publication statusPublished - 2015
EventConference on Oxide-Based Materials and Devices VI - San Francisco, Canada
Duration: 8 Feb 201511 Feb 2015

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9364
ISSN (Print)0277-786X

Conference

ConferenceConference on Oxide-Based Materials and Devices VI
Country/TerritoryCanada
Period8/02/1511/02/15

Keywords

  • (In)GaN p-i-n
  • ZnO
  • photovoltaic
  • LED
  • chemical lift-off
  • scale-up
  • substrate
  • GROWTH
  • GAN
  • MOVPE

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