Abstract
The precise registration of solid-state quantum emitters to photonic structures is a major technological challenge for fundamental research (e.g. in cavity quantum electrodynamics) and applications to quantum technology. Standard approaches include the complex multistep fabrication of photonic structures on pre-existing emitters, both registered within a grid of lithographically-defined markers. Here, we demonstrate a marker-free, femtosecond laser writing technique to generate individual quantum emitters within photonic structures. Characterization of 28 defect centers, laser-written at the centers of pre-existing solid immersion lens structures, showed offsets relative to the photonic structure's center of 260 nm in the x-direction and 60 nm in the y-direction, with standard deviations of ± 170 and ± 90 nm, respectively, resulting in an average 4.5 times enhancement of the optical collection efficiency. This method is scalable for developing integrated quantum devices using spin-photon interfaces in silicon carbide and is easily extendable to other materials.
| Original language | English |
|---|---|
| Pages (from-to) | 11528-11535 |
| Number of pages | 8 |
| Journal | Nano Letters |
| Volume | 25 |
| Issue number | 30 |
| Early online date | 10 Jun 2025 |
| DOIs | |
| Publication status | Published - 30 Jul 2025 |
Keywords
- Color Centers
- Femtosecond Laser Writing
- Qubits
- Scalable Quantum Devices
- Silicon Carbide
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering
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