Abstract
We present saturation absorption studies of the HH1 ? LH1 intersubband transition in a 70 Å p-type GaAs/AlGaAs multi-quantum well. The subband separation in this sample, with strongly non-parabolic bands, varies from 26 meV at k = 0 to 16 meV at the Fermi wave vector. The absorption behaviour of this transition is studied over a range of four orders of magnitude of intensity of incident THz radiation. The results are analysed within the contexts of a simple two-level model and an instantaneous thermalization model. The results indicate that the lifetime obtained with these models is limited by the pulsewidth, i.e. is greater than 1.7 ps. This places a lower limit on the energy relaxation time for transitions below the LO-phonon energy. © 1998 Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 181-185 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 2 |
| Issue number | 1-4 |
| Publication status | Published - 15 Jul 1998 |
Keywords
- Energy relaxation
- p-type quantum well
- Saturation absorption
- Terahertz radiation
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