Skip to main navigation Skip to search Skip to main content

Saturation absorption studies of intersubband relaxation rates in a p-GaAs/AlGaAs QW using a free electron laser

  • B. E. Cole
  • , C. J G M Langerak
  • , B. N. Murdin
  • , C. D. Bezant
  • , J. M. Chamberlain
  • , C. R. Pidgeon
  • , M. Henini
  • , V. Nakov

Research output: Contribution to journalArticlepeer-review

Abstract

We present saturation absorption studies of the HH1 ? LH1 intersubband transition in a 70 Å p-type GaAs/AlGaAs multi-quantum well. The subband separation in this sample, with strongly non-parabolic bands, varies from 26 meV at k = 0 to 16 meV at the Fermi wave vector. The absorption behaviour of this transition is studied over a range of four orders of magnitude of intensity of incident THz radiation. The results are analysed within the contexts of a simple two-level model and an instantaneous thermalization model. The results indicate that the lifetime obtained with these models is limited by the pulsewidth, i.e. is greater than 1.7 ps. This places a lower limit on the energy relaxation time for transitions below the LO-phonon energy. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)181-185
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
Publication statusPublished - 15 Jul 1998

Keywords

  • Energy relaxation
  • p-type quantum well
  • Saturation absorption
  • Terahertz radiation

Fingerprint

Dive into the research topics of 'Saturation absorption studies of intersubband relaxation rates in a p-GaAs/AlGaAs QW using a free electron laser'. Together they form a unique fingerprint.

Cite this