Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

S. Y. Wang; G. Horsburgh; Paul Joseph Thompson; I. Hauksson; J. T. Mullins; K. A. Prior; B. C. Cavenett

doi:10.1063/1.109880

Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

S. Y. Wang
, G. Horsburgh
, Paul Joseph Thompson
, I. Hauksson
, J. T. Mullins
, K. A. Prior
, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.

Original language	English
Pages (from-to)	857-859
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	7
DOIs	https://doi.org/10.1063/1.109880
Publication status	Published - 16 Aug 1993

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title = "Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm",

abstract = "Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.",

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AU - Wang, S. Y.

AU - Horsburgh, G.

AU - Thompson, Paul Joseph

AU - Hauksson, I.

AU - Mullins, J. T.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1993/8/16

Y1 - 1993/8/16

N2 - Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.

AB - Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.

UR - https://www.scopus.com/pages/publications/0000084903

U2 - 10.1063/1.109880

DO - 10.1063/1.109880

M3 - Article

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SP - 857

EP - 859

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

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