Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

S. Y. Wang, G. Horsburgh, Paul Joseph Thompson, I. Hauksson, J. T. Mullins, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.

Original languageEnglish
Pages (from-to)857-859
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number7
DOIs
Publication statusPublished - 16 Aug 1993

Fingerprint Dive into the research topics of 'Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm'. Together they form a unique fingerprint.

  • Cite this

    Wang, S. Y., Horsburgh, G., Thompson, P. J., Hauksson, I., Mullins, J. T., Prior, K. A., & Cavenett, B. C. (1993). Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm. Applied Physics Letters, 63(7), 857-859. https://doi.org/10.1063/1.109880