Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

S. Y. Wang, G. Horsburgh, Paul Joseph Thompson, I. Hauksson, J. T. Mullins, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.

Original languageEnglish
Pages (from-to)857-859
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number7
DOIs
Publication statusPublished - 16 Aug 1993

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electro-optics
optical bistability
room temperature
p-n junctions
molecular beam epitaxy
switches
quantum wells

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Wang, S. Y., Horsburgh, G., Thompson, P. J., Hauksson, I., Mullins, J. T., Prior, K. A., & Cavenett, B. C. (1993). Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm. Applied Physics Letters, 63(7), 857-859. https://doi.org/10.1063/1.109880
Wang, S. Y. ; Horsburgh, G. ; Thompson, Paul Joseph ; Hauksson, I. ; Mullins, J. T. ; Prior, K. A. ; Cavenett, B. C. / Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm. In: Applied Physics Letters. 1993 ; Vol. 63, No. 7. pp. 857-859.
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Wang, SY, Horsburgh, G, Thompson, PJ, Hauksson, I, Mullins, JT, Prior, KA & Cavenett, BC 1993, 'Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm', Applied Physics Letters, vol. 63, no. 7, pp. 857-859. https://doi.org/10.1063/1.109880

Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm. / Wang, S. Y.; Horsburgh, G.; Thompson, Paul Joseph; Hauksson, I.; Mullins, J. T.; Prior, K. A.; Cavenett, B. C.

In: Applied Physics Letters, Vol. 63, No. 7, 16.08.1993, p. 857-859.

Research output: Contribution to journalArticle

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