Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

R S Britton, T Grevatt, A Malinowski, R T Harley, P Perozzo, A R Cameron, A Miller

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Abstract

We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].

Original languageEnglish
Pages (from-to)2140-2142
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number15
DOIs
Publication statusPublished - 12 Oct 1998

Keywords

  • SEMICONDUCTORS
  • ELECTRONS
  • EXCITONS
  • TIMES
  • GAAS

Cite this

Britton, R. S., Grevatt, T., Malinowski, A., Harley, R. T., Perozzo, P., Cameron, A. R., & Miller, A. (1998). Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells. Applied Physics Letters, 73(15), 2140-2142. https://doi.org/10.1063/1.122403