Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

R S  Britton; T  Grevatt; A  Malinowski; R T  Harley; P  Perozzo; A R  Cameron; A  Miller

doi:10.1063/1.122403

Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

R S Britton, T Grevatt, A Malinowski, R T Harley, P Perozzo, A R Cameron, A Miller

School of Engineering & Physical Sciences

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Abstract

We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].

Original language	English
Pages (from-to)	2140-2142
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	15
DOIs	https://doi.org/10.1063/1.122403
Publication status	Published - 12 Oct 1998

Keywords

SEMICONDUCTORS
ELECTRONS
EXCITONS
TIMES
GAAS

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10.1063/1.122403

ApplPhysLett 73 2140Final published version, 379 KB

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title = "Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells",

abstract = "We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].",

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AU - Britton, R S

AU - Grevatt, T

AU - Malinowski, A

AU - Harley, R T

AU - Perozzo, P

AU - Cameron, A R

AU - Miller, A

PY - 1998/10/12

Y1 - 1998/10/12

N2 - We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].

AB - We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].

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KW - ELECTRONS

KW - EXCITONS

KW - TIMES

KW - GAAS

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SP - 2140

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

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Keywords

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