Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m

C. Reith, S. J. White, M. Mazilu, J. Konttinen, M. Guina, M. Pessa, Alan Miller

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Abstract

The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.

Original languageEnglish
Article number211122
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number21
DOIs
Publication statusPublished - 20 Nov 2006

Cite this

Reith, C., White, S. J., Mazilu, M., Konttinen, J., Guina, M., Pessa, M., & Miller, A. (2006). Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m. Applied Physics Letters, 89(21), -. [211122]. https://doi.org/10.1063/1.2396901