Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m

C. Reith; S. J. White; M. Mazilu; J. Konttinen; M. Guina; M. Pessa; Alan Miller

doi:10.1063/1.2396901

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m

C. Reith, S. J. White, M. Mazilu, J. Konttinen, M. Guina, M. Pessa, Alan Miller

School of Engineering & Physical Sciences

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Abstract

The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.

Original language	English
Article number	211122
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	21
DOIs	https://doi.org/10.1063/1.2396901
Publication status	Published - 20 Nov 2006

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ApplPhysLett 89 211122Final published version, 383 KB

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title = "Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m",

abstract = "The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.",

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T1 - Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m

AU - Reith, C.

AU - White, S. J.

AU - Mazilu, M.

AU - Konttinen, J.

AU - Guina, M.

AU - Pessa, M.

AU - Miller, Alan

PY - 2006/11/20

Y1 - 2006/11/20

N2 - The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.

AB - The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.

U2 - 10.1063/1.2396901

DO - 10.1063/1.2396901

M3 - Article

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VL - 89

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211122

ER -

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m

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