Original language | English |
---|---|
Pages (from-to) | 1250-1266 |
Number of pages | 17 |
Journal | IEEE Transactions on Power Electronics |
Volume | 15 |
Issue number | 6 |
Publication status | Published - 2000 |
Review of IGBT models
Barry Wayne Williams, Stephen Jon Finney, K Sheng
Research output: Contribution to journal › Article
254
Citations
(Scopus)