Review of germanium-silicon single-photon avalanche diodes

Neil Na*, Erik Chen, Gerald S. Buller, Robert H. Hadfield, Richard A. Soref

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

While it took about a decade for a germanium (Ge) thin film grown on a silicon (Si) substrate to be successfully applied as a detector material for high-speed optical fiber communication application, it took about another decade to further expand its usage as a sensor material for active optical sensing and imaging applications. In this paper, we shall review the progress of a shortwave infrared (SWIR) single-photon detection (SPD) with germanium-silicon (GeSi) single-photon avalanche diode (SPAD), ranging from the first demonstration at cryogenic temperature (Z. Lu et al., 2011) to the recent demonstration at room temperature (N. Na et al, 2024). Potential new applications will also be discussed.

Original languageEnglish
Title of host publicationAdvanced Photon Counting Techniques XIX
EditorsMark A. Itzler, Joshua C. Bienfang, K. Alex McIntosh
PublisherSPIE
ISBN (Electronic)9781510686861
ISBN (Print)9781510686854
DOIs
Publication statusPublished - 30 May 2025
EventSPIE Defense + Commercial Sensing 2025 - Orlando, United States
Duration: 15 Apr 202516 Apr 2025

Publication series

NameProceedings of SPIE
Volume13448
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSPIE Defense + Commercial Sensing 2025
Country/TerritoryUnited States
CityOrlando
Period15/04/2516/04/25

Keywords

  • Ge-on-Si
  • GeSi
  • Si photonics
  • single-photon avalanche diode
  • single-photon detection
  • SWIR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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