Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Dirch H. Petersen, Ole Hansen, Torben M. Hansen, Peter Boggild, Rong Lin, Daniel Kjaer, Peter F. Nielsen, Trudo Clarysse, Wilfried Vandervorst, Erik Rosseel, Nick S Bennett, Nick E. B. Cowern

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30 Citations (Scopus)

Abstract

Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.

Original languageEnglish
Pages (from-to)C1C27-C1C33
Number of pages7
JournalJournal Vacuum Science and Technology B
Volume28
Issue number1
DOIs
Publication statusPublished - Jan 2010

Keywords

  • electric variables measurement
  • electrical resistivity
  • Hall effect
  • reviews
  • semiconductor junctions
  • SHEET RESISTANCE MEASUREMENT
  • RESOLUTION
  • METROLOGY
  • SILICON
  • SI

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