Resonant Raman scattering from screened longitudinal optical phonons in EuTe

G. D. Holah, J. S. Webb, R. B. Dennis, C. R. Pidgeon

Research output: Contribution to journalArticle

Abstract

Forbidden resonant Raman scattering from screened longitudinal optical, LO, phonons has been observed in the back-reflection geometry from n-type EuTe at 2°K. The Raman shift increased with increasing excitation frequency but was always between the LO and TO phonon frequencies. This effect is explained in terms of a varying 'effective' carrier concentration as a function of laser penetration depth through the surface depletion layer in the situation of large phonon wave vector. Conduction band and lattice parameters have been calculated from infrared Reststrahlen and plasma edge measurements. © 1973.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalSolid State Communications
Volume13
Issue number2
Publication statusPublished - 15 Jul 1973

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