Abstract
Forbidden resonant Raman scattering from screened longitudinal optical, LO, phonons has been observed in the back-reflection geometry from n-type EuTe at 2°K. The Raman shift increased with increasing excitation frequency but was always between the LO and TO phonon frequencies. This effect is explained in terms of a varying 'effective' carrier concentration as a function of laser penetration depth through the surface depletion layer in the situation of large phonon wave vector. Conduction band and lattice parameters have been calculated from infrared Reststrahlen and plasma edge measurements. © 1973.
| Original language | English |
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| Pages (from-to) | 209-213 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 13 |
| Issue number | 2 |
| Publication status | Published - 15 Jul 1973 |