Relaxation of photoexcited carriers in GaAs

V K Mathur, S Rogers

Research output: Contribution to journalArticle

Abstract

An experiment is described to measure directly the mean free lifetime of the photoexcited carriers in a semi-insulating crystal by monitoring its photoconductivity.

Original languageEnglish
Pages (from-to)765-768
Number of pages4
JournalApplied Physics Letters
Volume31
Issue number11
DOIs
Publication statusPublished - 1977

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photoconductivity
life (durability)
crystals

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Mathur, V K ; Rogers, S. / Relaxation of photoexcited carriers in GaAs. In: Applied Physics Letters. 1977 ; Vol. 31, No. 11. pp. 765-768.
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Mathur, VK & Rogers, S 1977, 'Relaxation of photoexcited carriers in GaAs', Applied Physics Letters, vol. 31, no. 11, pp. 765-768. https://doi.org/10.1063/1.89541

Relaxation of photoexcited carriers in GaAs. / Mathur, V K; Rogers, S.

In: Applied Physics Letters, Vol. 31, No. 11, 1977, p. 765-768.

Research output: Contribution to journalArticle

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