Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide

Alexander Jones; Xingrui Cheng; Patrick Salter; Jason Smith; Cristian Bonato; Christiaan Bekker

doi:10.1117/12.3047648

Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide

Alexander Jones, Xingrui Cheng, Patrick Salter, Jason Smith, Cristian Bonato, Christiaan Bekker^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

Optically-active solid-state qubits based on silicon vacancy (VSi) centers in silicon carbide (SiC) are a promising emerging platform for use in quantum technologies due to their long-lived electronic spin states and strong spin-photon interaction. SiC possesses a high optical refractive index, strongly limiting light collected from quantum emitters due to reflections at the crystal interface. Solid immersion lenses (SILs) fabricated through grayscale hard-mask lithography provide a scalable and controllable solution, with a factor of 4.4±1.0 brightness enhancement demonstrated for VSi centers. However, these emitters were generated with no spatial selectivity, so that most were not optimally located for light extraction. Here, we present results utilizing femtosecond laser writing to generate single VSi centers near the center of SIL structures with the goal of improving positional accuracy and optimizing yield of single photon emitters with respect to laser writing energy.

Original language	English
Title of host publication	Quantum Sensing and Nano Electronics and Photonics XXI
Editors	Manijeh Razeghi, Giti A. Khodaparast, Miriam S. Vitiello
Publisher	SPIE
ISBN (Electronic)	9781510685017
ISBN (Print)	9781510685000
DOIs	https://doi.org/10.1117/12.3047648
Publication status	Published - 21 Mar 2025
Event	Quantum Sensing and Nano Electronics and Photonics XXI 2025 - San Francisco, United States Duration: 26 Jan 2025 → 30 Jan 2025

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	13376
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Quantum Sensing and Nano Electronics and Photonics XXI 2025
Country/Territory	United States
City	San Francisco
Period	26/01/25 → 30/01/25

Keywords

femtosecond laser writing
grayscale hardmask lithography
registration
silicon carbide
silicon vacancy
single photon emitter
solid immersion lens
solid-state defect color center

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.3047648

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Jones, A., Cheng, X., Salter, P., Smith, J., Bonato, C., & Bekker, C. (2025). Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide. In M. Razeghi, G. A. Khodaparast, & M. S. Vitiello (Eds.), Quantum Sensing and Nano Electronics and Photonics XXI Article 133760L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13376). SPIE. https://doi.org/10.1117/12.3047648

Jones, Alexander ; Cheng, Xingrui ; Salter, Patrick et al. / Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide. Quantum Sensing and Nano Electronics and Photonics XXI. editor / Manijeh Razeghi ; Giti A. Khodaparast ; Miriam S. Vitiello. SPIE, 2025. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide",

abstract = "Optically-active solid-state qubits based on silicon vacancy (VSi) centers in silicon carbide (SiC) are a promising emerging platform for use in quantum technologies due to their long-lived electronic spin states and strong spin-photon interaction. SiC possesses a high optical refractive index, strongly limiting light collected from quantum emitters due to reflections at the crystal interface. Solid immersion lenses (SILs) fabricated through grayscale hard-mask lithography provide a scalable and controllable solution, with a factor of 4.4±1.0 brightness enhancement demonstrated for VSi centers. However, these emitters were generated with no spatial selectivity, so that most were not optimally located for light extraction. Here, we present results utilizing femtosecond laser writing to generate single VSi centers near the center of SIL structures with the goal of improving positional accuracy and optimizing yield of single photon emitters with respect to laser writing energy.",

keywords = "femtosecond laser writing, grayscale hardmask lithography, registration, silicon carbide, silicon vacancy, single photon emitter, solid immersion lens, solid-state defect color center",

author = "Alexander Jones and Xingrui Cheng and Patrick Salter and Jason Smith and Cristian Bonato and Christiaan Bekker",

note = "Publisher Copyright: {\textcopyright} 2025 SPIE.; Quantum Sensing and Nano Electronics and Photonics XXI 2025 ; Conference date: 26-01-2025 Through 30-01-2025",

year = "2025",

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doi = "10.1117/12.3047648",

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Jones, A, Cheng, X, Salter, P, Smith, J, Bonato, C & Bekker, C 2025, Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide. in M Razeghi, GA Khodaparast & MS Vitiello (eds), Quantum Sensing and Nano Electronics and Photonics XXI., 133760L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 13376, SPIE, Quantum Sensing and Nano Electronics and Photonics XXI 2025, San Francisco, United States, 26/01/25. https://doi.org/10.1117/12.3047648

Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide. / Jones, Alexander; Cheng, Xingrui; Salter, Patrick et al.
Quantum Sensing and Nano Electronics and Photonics XXI. ed. / Manijeh Razeghi; Giti A. Khodaparast; Miriam S. Vitiello. SPIE, 2025. 133760L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13376).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide

AU - Jones, Alexander

AU - Cheng, Xingrui

AU - Salter, Patrick

AU - Smith, Jason

AU - Bonato, Cristian

AU - Bekker, Christiaan

PY - 2025/3/21

Y1 - 2025/3/21

N2 - Optically-active solid-state qubits based on silicon vacancy (VSi) centers in silicon carbide (SiC) are a promising emerging platform for use in quantum technologies due to their long-lived electronic spin states and strong spin-photon interaction. SiC possesses a high optical refractive index, strongly limiting light collected from quantum emitters due to reflections at the crystal interface. Solid immersion lenses (SILs) fabricated through grayscale hard-mask lithography provide a scalable and controllable solution, with a factor of 4.4±1.0 brightness enhancement demonstrated for VSi centers. However, these emitters were generated with no spatial selectivity, so that most were not optimally located for light extraction. Here, we present results utilizing femtosecond laser writing to generate single VSi centers near the center of SIL structures with the goal of improving positional accuracy and optimizing yield of single photon emitters with respect to laser writing energy.

AB - Optically-active solid-state qubits based on silicon vacancy (VSi) centers in silicon carbide (SiC) are a promising emerging platform for use in quantum technologies due to their long-lived electronic spin states and strong spin-photon interaction. SiC possesses a high optical refractive index, strongly limiting light collected from quantum emitters due to reflections at the crystal interface. Solid immersion lenses (SILs) fabricated through grayscale hard-mask lithography provide a scalable and controllable solution, with a factor of 4.4±1.0 brightness enhancement demonstrated for VSi centers. However, these emitters were generated with no spatial selectivity, so that most were not optimally located for light extraction. Here, we present results utilizing femtosecond laser writing to generate single VSi centers near the center of SIL structures with the goal of improving positional accuracy and optimizing yield of single photon emitters with respect to laser writing energy.

KW - femtosecond laser writing

KW - grayscale hardmask lithography

KW - registration

KW - silicon carbide

KW - silicon vacancy

KW - single photon emitter

KW - solid immersion lens

KW - solid-state defect color center

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DO - 10.1117/12.3047648

M3 - Conference contribution

AN - SCOPUS:105004555436

SN - 9781510685000

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Quantum Sensing and Nano Electronics and Photonics XXI

A2 - Razeghi, Manijeh

A2 - Khodaparast, Giti A.

A2 - Vitiello, Miriam S.

PB - SPIE

T2 - Quantum Sensing and Nano Electronics and Photonics XXI 2025

Y2 - 26 January 2025 through 30 January 2025

ER -

Jones A, Cheng X, Salter P, Smith J, Bonato C , Bekker C. Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide. In Razeghi M, Khodaparast GA, Vitiello MS, editors, Quantum Sensing and Nano Electronics and Photonics XXI. SPIE. 2025. 133760L. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.3047648

Registered generation of single color centers within large-array hemispherical solid immersion lenses in silicon carbide

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