Abstract
Picosecond angularly-resolved excite-probe measurements have been used to make the first identification of a negative refractive optoelectronic nonlinearity in the ZnSe material deposited in thin-film nonlinear interference filters. A positive thermal refractive nonlinearity becomes dominant within 6 ps. We attribute the ultrafast relaxation of the photoexcited carriers to surface recombination at grain boundaries within the material. © 1992.
| Original language | English |
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| Pages (from-to) | 71-74 |
| Number of pages | 4 |
| Journal | Optical Materials |
| Volume | 1 |
| Issue number | 2 |
| Publication status | Published - Apr 1992 |