Reduced surface sidewall recombination and diffusion in quantum-dot lasers

Stephen A. Moore, Liam O'Faolain, Maria Ana Cataluna, Michael B. Flynn, Maria V. Kotlyar, Thomas F. Krauss

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 μm) and, for the first time, provide a value for surface recombination velocity (5 × 104 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5 × 105 cm/s and 5 μm, respectively) allowing the creation of narrow (2-3 μm wide) lasers with comparable threshold currents to those of broad area devices.

Original languageEnglish
Pages (from-to)1861-1863
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number17
DOIs
Publication statusPublished - Sep 2006

Keywords

  • Diffusion length
  • Low threshold
  • Quantum-dot lasers
  • Surface recombination

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Reduced surface sidewall recombination and diffusion in quantum-dot lasers'. Together they form a unique fingerprint.

  • Cite this