Abstract
We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 μm) and, for the first time, provide a value for surface recombination velocity (5 × 104 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5 × 105 cm/s and 5 μm, respectively) allowing the creation of narrow (2-3 μm wide) lasers with comparable threshold currents to those of broad area devices.
Original language | English |
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Pages (from-to) | 1861-1863 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 18 |
Issue number | 17 |
DOIs | |
Publication status | Published - Sept 2006 |
Keywords
- Diffusion length
- Low threshold
- Quantum-dot lasers
- Surface recombination
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials