Red-shift of stimulated emission in ZnSe-based semiconductors

C. Higgs, I. J. Blewett, I. Galbraith, N. R. Gallaher, A. K. Kar, B. S. Wherrett

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A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)235-240
Number of pages6
JournalOptical Materials
Issue number3
Publication statusPublished - Jul 1998

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    Higgs, C., Blewett, I. J., Galbraith, I., Gallaher, N. R., Kar, A. K., & Wherrett, B. S. (1998). Red-shift of stimulated emission in ZnSe-based semiconductors. Optical Materials, 10(3), 235-240.