Red-shift of stimulated emission in ZnSe-based semiconductors

C. Higgs; I. J. Blewett; I. Galbraith; N. R. Gallaher; A. K. Kar; B. S. Wherrett

Red-shift of stimulated emission in ZnSe-based semiconductors

C. Higgs, I. J. Blewett, I. Galbraith, N. R. Gallaher, A. K. Kar, B. S. Wherrett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends. © 1998 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	235-240
Number of pages	6
Journal	Optical Materials
Volume	10
Issue number	3
Publication status	Published - Jul 1998

Cite this

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title = "Red-shift of stimulated emission in ZnSe-based semiconductors",

abstract = "A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends. {\textcopyright} 1998 Elsevier Science B.V. All rights reserved.",

author = "C. Higgs and Blewett, {I. J.} and I. Galbraith and Gallaher, {N. R.} and Kar, {A. K.} and Wherrett, {B. S.}",

year = "1998",

month = jul,

language = "English",

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pages = "235--240",

journal = "Optical Materials",

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T1 - Red-shift of stimulated emission in ZnSe-based semiconductors

AU - Higgs, C.

AU - Blewett, I. J.

AU - Galbraith, I.

AU - Gallaher, N. R.

AU - Kar, A. K.

AU - Wherrett, B. S.

PY - 1998/7

Y1 - 1998/7

N2 - A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends. © 1998 Elsevier Science B.V. All rights reserved.

AB - A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends. © 1998 Elsevier Science B.V. All rights reserved.

UR - http://www.scopus.com/inward/record.url?scp=0032122119&partnerID=8YFLogxK

M3 - Article

VL - 10

SP - 235

EP - 240

JO - Optical Materials

JF - Optical Materials

IS - 3

ER -

Red-shift of stimulated emission in ZnSe-based semiconductors

Abstract

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