Red-shift of stimulated emission in ZnSe-based semiconductors

C. Higgs, I. J. Blewett, I. Galbraith, N. R. Gallaher, A. K. Kar, B. S. Wherrett

Research output: Contribution to journalArticle

Abstract

A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)235-240
Number of pages6
JournalOptical Materials
Volume10
Issue number3
Publication statusPublished - Jul 1998

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stimulated emission
red shift
quantum wells
molecular beams
trends
heating
shift
wavelengths
excitation
lasers
temperature

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Higgs, C., Blewett, I. J., Galbraith, I., Gallaher, N. R., Kar, A. K., & Wherrett, B. S. (1998). Red-shift of stimulated emission in ZnSe-based semiconductors. Optical Materials, 10(3), 235-240.
Higgs, C. ; Blewett, I. J. ; Galbraith, I. ; Gallaher, N. R. ; Kar, A. K. ; Wherrett, B. S. / Red-shift of stimulated emission in ZnSe-based semiconductors. In: Optical Materials. 1998 ; Vol. 10, No. 3. pp. 235-240.
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Higgs, C, Blewett, IJ, Galbraith, I, Gallaher, NR, Kar, AK & Wherrett, BS 1998, 'Red-shift of stimulated emission in ZnSe-based semiconductors', Optical Materials, vol. 10, no. 3, pp. 235-240.

Red-shift of stimulated emission in ZnSe-based semiconductors. / Higgs, C.; Blewett, I. J.; Galbraith, I.; Gallaher, N. R.; Kar, A. K.; Wherrett, B. S.

In: Optical Materials, Vol. 10, No. 3, 07.1998, p. 235-240.

Research output: Contribution to journalArticle

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T1 - Red-shift of stimulated emission in ZnSe-based semiconductors

AU - Higgs, C.

AU - Blewett, I. J.

AU - Galbraith, I.

AU - Gallaher, N. R.

AU - Kar, A. K.

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AB - A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends. © 1998 Elsevier Science B.V. All rights reserved.

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Higgs C, Blewett IJ, Galbraith I, Gallaher NR, Kar AK, Wherrett BS. Red-shift of stimulated emission in ZnSe-based semiconductors. Optical Materials. 1998 Jul;10(3):235-240.