Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times

C. T. Seaton; S. D. Smith; F. A P Tooley; M. E. Prise; M. R. Taghizadeh

doi:10.1063/1.93870

Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times

C. T. Seaton, S. D. Smith, F. A P Tooley, M. E. Prise, M. R. Taghizadeh

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report the novel operation of a natural reflectivity InSb bistable resonator at 77 K, pumped with a cw CO laser at 1819 cm^-1, as a single pulse detector with definite threshold energy and as an optical AND gate. The two switching pulses for the AND gate logic operation are 30-ps single, switched-out pulses from a mode-locked neodymium: yttrium aluminum garnet (Nd:YAG) laser. Introduction of a variable time delay between the logic pulses provides a unique technique for measurement of the photogenerated carrier lifetime and yields a recombination time ~90 ns for a cw CO holding intensity ~80 W/cm².

Original language	English
Pages (from-to)	131-133
Number of pages	3
Journal	Applied Physics Letters
Volume	42
Issue number	2
DOIs	https://doi.org/10.1063/1.93870
Publication status	Published - 1983

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title = "Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times",

abstract = "We report the novel operation of a natural reflectivity InSb bistable resonator at 77 K, pumped with a cw CO laser at 1819 cm-1, as a single pulse detector with definite threshold energy and as an optical AND gate. The two switching pulses for the AND gate logic operation are 30-ps single, switched-out pulses from a mode-locked neodymium: yttrium aluminum garnet (Nd:YAG) laser. Introduction of a variable time delay between the logic pulses provides a unique technique for measurement of the photogenerated carrier lifetime and yields a recombination time ~90 ns for a cw CO holding intensity ~80 W/cm2.",

author = "Seaton, {C. T.} and Smith, {S. D.} and Tooley, {F. A P} and Prise, {M. E.} and Taghizadeh, {M. R.}",

year = "1983",

doi = "10.1063/1.93870",

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T1 - Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times

AU - Seaton, C. T.

AU - Smith, S. D.

AU - Tooley, F. A P

AU - Prise, M. E.

AU - Taghizadeh, M. R.

PY - 1983

Y1 - 1983

N2 - We report the novel operation of a natural reflectivity InSb bistable resonator at 77 K, pumped with a cw CO laser at 1819 cm-1, as a single pulse detector with definite threshold energy and as an optical AND gate. The two switching pulses for the AND gate logic operation are 30-ps single, switched-out pulses from a mode-locked neodymium: yttrium aluminum garnet (Nd:YAG) laser. Introduction of a variable time delay between the logic pulses provides a unique technique for measurement of the photogenerated carrier lifetime and yields a recombination time ~90 ns for a cw CO holding intensity ~80 W/cm2.

AB - We report the novel operation of a natural reflectivity InSb bistable resonator at 77 K, pumped with a cw CO laser at 1819 cm-1, as a single pulse detector with definite threshold energy and as an optical AND gate. The two switching pulses for the AND gate logic operation are 30-ps single, switched-out pulses from a mode-locked neodymium: yttrium aluminum garnet (Nd:YAG) laser. Introduction of a variable time delay between the logic pulses provides a unique technique for measurement of the photogenerated carrier lifetime and yields a recombination time ~90 ns for a cw CO holding intensity ~80 W/cm2.

U2 - 10.1063/1.93870

DO - 10.1063/1.93870

M3 - Article

SN - 0003-6951

VL - 42

SP - 131

EP - 133

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times

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