The optic phonons of Ga1-xAlxSb layers with 0=x=1 grown by molecular-beam epitaxy on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon energies are interpreted using a modified random element isodisplacement model to allow accurate composition determination. A comparison between the layers grown on GaAs and GaSb substrates is made in terms of strain and anharmonicity effects and related to x-ray and transmission electron microscopy measurements.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1989|