Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates

Miles Haines, T. Kerr, S. Newstead, P. B. Kirby

Research output: Contribution to journalArticle

Abstract

The optic phonons of Ga1-xAlxSb layers with 0=x=1 grown by molecular-beam epitaxy on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon energies are interpreted using a modified random element isodisplacement model to allow accurate composition determination. A comparison between the layers grown on GaAs and GaSb substrates is made in terms of strain and anharmonicity effects and related to x-ray and transmission electron microscopy measurements.

Original languageEnglish
Pages (from-to)1942-1946
Number of pages5
JournalJournal of Applied Physics
Volume65
Issue number5
DOIs
Publication statusPublished - 1989

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