Abstract
The optic phonons of Ga1-xAlxSb layers with 0=x=1 grown by molecular-beam epitaxy on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon energies are interpreted using a modified random element isodisplacement model to allow accurate composition determination. A comparison between the layers grown on GaAs and GaSb substrates is made in terms of strain and anharmonicity effects and related to x-ray and transmission electron microscopy measurements.
Original language | English |
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Pages (from-to) | 1942-1946 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 65 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1989 |