Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates

Miles Haines; T. Kerr; S. Newstead; P. B. Kirby

doi:10.1063/1.342882

Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates

Miles Haines, T. Kerr, S. Newstead, P. B. Kirby

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The optic phonons of Ga_1-xAl_xSb layers with 0=x=1 grown by molecular-beam epitaxy on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon energies are interpreted using a modified random element isodisplacement model to allow accurate composition determination. A comparison between the layers grown on GaAs and GaSb substrates is made in terms of strain and anharmonicity effects and related to x-ray and transmission electron microscopy measurements.

Original language	English
Pages (from-to)	1942-1946
Number of pages	5
Journal	Journal of Applied Physics
Volume	65
Issue number	5
DOIs	https://doi.org/10.1063/1.342882
Publication status	Published - 1989

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10.1063/1.342882

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title = "Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates",

abstract = "The optic phonons of Ga1-xAlxSb layers with 0=x=1 grown by molecular-beam epitaxy on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon energies are interpreted using a modified random element isodisplacement model to allow accurate composition determination. A comparison between the layers grown on GaAs and GaSb substrates is made in terms of strain and anharmonicity effects and related to x-ray and transmission electron microscopy measurements.",

author = "Miles Haines and T. Kerr and S. Newstead and Kirby, {P. B.}",

year = "1989",

doi = "10.1063/1.342882",

language = "English",

volume = "65",

pages = "1942--1946",

journal = "Journal of Applied Physics",

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T1 - Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates

AU - Haines, Miles

AU - Kerr, T.

AU - Newstead, S.

AU - Kirby, P. B.

PY - 1989

Y1 - 1989

N2 - The optic phonons of Ga1-xAlxSb layers with 0=x=1 grown by molecular-beam epitaxy on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon energies are interpreted using a modified random element isodisplacement model to allow accurate composition determination. A comparison between the layers grown on GaAs and GaSb substrates is made in terms of strain and anharmonicity effects and related to x-ray and transmission electron microscopy measurements.

AB - The optic phonons of Ga1-xAlxSb layers with 0=x=1 grown by molecular-beam epitaxy on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon energies are interpreted using a modified random element isodisplacement model to allow accurate composition determination. A comparison between the layers grown on GaAs and GaSb substrates is made in terms of strain and anharmonicity effects and related to x-ray and transmission electron microscopy measurements.

U2 - 10.1063/1.342882

DO - 10.1063/1.342882

M3 - Article

SN - 0021-8979

VL - 65

SP - 1942

EP - 1946

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates

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