Rabi oscillations of ultrashort pulses in 1.55-μm InGaAs/InGaAsP quantum-well optical amplifiers

J. Z. Zhang, I. Galbraith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using the Foreman effective mass Hamiltonian for InxGa 1-xAs/InyGa1-yAszP1-z quantum wells, the propagation of a 150 fs pulse in an optical amplifier was calculated taking into account the multi-subband carrier dynamics and heating as well as the polarization dynamics. The intensity of the propagated pulse as well as its imposed frequency chirp, the carrier density and temperature show strong Rabi oscillations. © 2005 American Institute of Physics.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1236-1237
Number of pages2
Volume772
DOIs
Publication statusPublished - 30 Jun 2005
Event27th International Conference on the Physics of Semiconductors - Flagstaff, Arizona, Argentina
Duration: 26 Jul 200430 Jul 2004

Conference

Conference27th International Conference on the Physics of Semiconductors
Abbreviated titleICPS-27
CountryArgentina
CityFlagstaff, Arizona
Period26/07/0430/07/04

Fingerprint Dive into the research topics of 'Rabi oscillations of ultrashort pulses in 1.55-μm InGaAs/InGaAsP quantum-well optical amplifiers'. Together they form a unique fingerprint.

  • Cite this

    Zhang, J. Z., & Galbraith, I. (2005). Rabi oscillations of ultrashort pulses in 1.55-μm InGaAs/InGaAsP quantum-well optical amplifiers. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Vol. 772, pp. 1236-1237) https://doi.org/10.1063/1.1994560