The authors report the first observation of quasi-steady-state optical bistability in an InSb etalon at room temperature as a result of the generation of free carriers through two-photon absorption of 10 mu m radiation. Nonlinear tuning of the etalon through two free spectral ranges has been achieved, with bistability observed around the two cavity resonances. Switching from a low to high transmission state has been achieved in times less than 10 ns while switching in the opposite direction occurs within 50-100 ns. The experimental results have been successfully fitted to a numerical model of the device.
|Number of pages||7|
|Journal||IEEE Journal of Quantum Electronics|
|Publication status||Published - Feb 1986|