Abstract
The authors report the first observation of quasi-steady-state optical bistability in an InSb etalon at room temperature as a result of the generation of free carriers through two-photon absorption of 10 mu m radiation. Nonlinear tuning of the etalon through two free spectral ranges has been achieved, with bistability observed around the two cavity resonances. Switching from a low to high transmission state has been achieved in times less than 10 ns while switching in the opposite direction occurs within 50-100 ns. The experimental results have been successfully fitted to a numerical model of the device.
| Original language | English |
|---|---|
| Pages (from-to) | 369-375 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | QE-22 |
| Issue number | 3 |
| Publication status | Published - Feb 1986 |