Abstract
A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.
| Original language | English |
|---|---|
| Pages (from-to) | 686-688 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 43 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 7 Jun 2007 |