Quantum-confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

D. B. Malins; A. Gomez-Iglesias; P. Spencer; E. Clarke; R. Murray; Alan Miller

doi:10.1049/el:20071221

Quantum-confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

D. B. Malins, A. Gomez-Iglesias, P. Spencer, E. Clarke, R. Murray, Alan Miller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.

Original language	English
Pages (from-to)	686-688
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	12
DOIs	https://doi.org/10.1049/el:20071221
Publication status	Published - 7 Jun 2007

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@article{db53d3af851a4ffb8a615d7bc60b59ef,

title = "Quantum-confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide",

abstract = "A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.",

author = "Malins, {D. B.} and A. Gomez-Iglesias and P. Spencer and E. Clarke and R. Murray and Alan Miller",

year = "2007",

month = jun,

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doi = "10.1049/el:20071221",

language = "English",

volume = "43",

pages = "686--688",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Quantum-confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

AU - Malins, D. B.

AU - Gomez-Iglesias, A.

AU - Spencer, P.

AU - Clarke, E.

AU - Murray, R.

AU - Miller, Alan

PY - 2007/6/7

Y1 - 2007/6/7

N2 - A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.

AB - A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.

U2 - 10.1049/el:20071221

DO - 10.1049/el:20071221

M3 - Article

SN - 0013-5194

VL - 43

SP - 686

EP - 688

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Quantum-confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

Abstract

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